Annealing effects on the microstructure and magnetic properties of Y3Fe5O12 films deposited on Si/SiO2 substrates by RF magnetron sputtering
Annealing effects on the microstructure and magnetic properties of Y3Fe5O12 films deposited on Si/SiO2 substrates by RF magnetron sputtering
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退火对射频磁控溅射在Si/SiO2基片上沉积Y3Fe5O12薄膜微观结构和磁性能的影响
DOI：
10.1016/j.ceramint.2017.03.023
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发表时间：
2017-07
影响因子：
5.2
通讯作者：
Dong Xianlin
中科院分区：
文献类型：
--
作者：
Lian Jianyun;Chen Ying;Liu Zhen;Zhu Mingkang;Wang Genshui;Zhang Wenbin;Dong Xianlin
采用射频磁控溅射法在Si/SiO2衬底上制备了无裂纹的钇铁石榴石（Y3 Fe 5 O 12，YIG）薄膜。研究了退火条件对YIG薄膜结晶度、微结构和磁性能的影响。随着退火温度的升高，YIG薄膜的饱和磁化强度增大，矫顽场减小，铁磁共振线宽变宽。在750 °C，1 °C/min的冷却速率下退火，薄膜无裂纹，综合性能良好，在9.4GHz下矫顽力为32 Oe，FMR线宽为57 Oe。这些结果表明，通过控制退火工艺，可以在Si/SiO2衬底上制备出高质量、无裂纹、磁性能优异的YIG薄膜，从而为低损耗微波集成器件的制备提供了便利。
Crack-free Yttrium iron garnet (Y3Fe5O12, YIG) thin films were successfully deposited on Si/SiO2substrates by RF magnetron sputtering, through controlling the annealing temperature and cooling rate during post-annealing process. The annealing condition dependences of crystallinity, microstructures and magnetic properties of YIG films were investigated. With the increase of the annealing temperature, the saturation magnetization of YIG films increases and the coercive field decreases, while the ferromagnetic resonance (FMR) linewidth becomes wider. The films annealed at 750 °C with cooling rate of 1 °C/min are crack-free and present excellent comprehensive performances, the corresponding coercive field is 32 Oe and the FMR linewidth is 57 Oe at 9.4 GHz. These results indicate that high-quality crack-free YIG films with excellent magnetic properties can be achieved on Si/SiO2substrates by controlling the annealing process, which makes it more convenient to fabricate low-loss microwave integrated devices.
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影响因子：
3.2
作者：
Zhu, Yun;Qiu, Gang;Tsai, Chen S.
通讯作者：
Tsai, Chen S.
采用化学溶液沉积 (CSD) 技术在硅衬底上生长钇铁石榴石薄膜并对其进行表征
影响因子：
6.2
作者：
Guo Xin;Chen Ying;Wang Genshui;Zhang Yuanyuan;Ge Jun;Tang Xiaodong;Ponchel Freddy;Remiens Denis;Dong Xianlin
通讯作者：
Dong Xianlin
影响因子：
4
作者：
d'Allivy Kelly, O.;Anane, A.;Fert, A.
通讯作者：
Fert, A.
影响因子：
2.7
作者：
Boudiar, T;Payet-Gervy, B;Joisten, H
通讯作者：
Joisten, H
影响因子：
2.7
作者：
Naresh Kumar;S. Prasad;D. S. Misra;N. Venkataramani;M. Bohra;R. Krishnan
通讯作者：
Naresh Kumar;S. Prasad;D. S. Misra;N. Venkataramani;M. Bohra;R. Krishnan