Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique
Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique
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采用化学溶液沉积 (CSD) 技术在硅衬底上生长钇铁石榴石薄膜并对其进行表征
DOI：
10.1016/j.jallcom.2016.02.072
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发表时间：
2016-06
影响因子：
6.2
通讯作者：
Dong Xianlin
中科院分区：
文献类型：
--
作者：
Guo Xin;Chen Ying;Wang Genshui;Zhang Yuanyuan;Ge Jun;Tang Xiaodong;Ponchel Freddy;Remiens Denis;Dong Xianlin
以乙酸和去离子水为溶剂，采用化学溶液沉积（CSD）技术在Si衬底上制备了钇铁石榴石（YIG）薄膜。在750 °C和850 °C退火时，YIG薄膜结晶良好，无裂纹，表面粗糙度仅为几个纳米。在750 °C退火30 min时，YIG薄膜的饱和磁化强度（Ms）和矫顽场（Hc）分别为0.121 emu/mm ~ 3（4πMs = 1.52 kGs）和7 Oe，与PLD法制备的YIG薄膜相近。在9.10 GHz下，铁磁共振（FMR）的峰-峰线宽为220 Oe。结果表明，CSD技术是一种在硅衬底上制备高质量钇铁石榴石（YIG）薄膜的优良技术，为硅基集成器件的大规模生产提供了一条低成本的途径。
Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 °C and 850 °C respectively, showing a low surface roughness of several nanometers. When annealed at 750 °C for 30 min, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm3(4πMs = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower-cost way for large-scale production on Si-based integrated devices.
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影响因子：
3.2
作者：
Zhu, Yun;Qiu, Gang;Tsai, Chen S.
通讯作者：
Tsai, Chen S.
DOI：
10.1063/1.4710205
发表时间：
2012-06
期刊：
--
影响因子：
--
作者：
S. Katlakunta;S. Murthy
通讯作者：
S. Katlakunta;S. Murthy
影响因子：
2.3
作者：
Scooter D. Johnson;E. Glaser;S. Cheng;F. Kub;C. Eddy
通讯作者：
Scooter D. Johnson;E. Glaser;S. Cheng;F. Kub;C. Eddy
影响因子：
4
作者：
Jungfleisch, M. B.;Lauer, V.;Hillebrands, B.
通讯作者：
Hillebrands, B.
影响因子：
4
作者：
Sun, Yiyan;Song, Young-Yeal;Hoffmann, Axel
通讯作者：
Hoffmann, Axel