Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
复制标题
用于内存处理实现的压控磁隧道结
DOI：
10.1109/led.2018.2791510
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发表时间：
2018-03
影响因子：
4.9
通讯作者：
Weisheng Zhao
中科院分区：
文献类型：
--
作者：
Lezhi Wang;Wang Kang;Farbod Ebrahimi;Xiang Li;Yangqi Huang;Chao Zhao;Kang L. Wang;Weisheng Zhao
The processing-in-memory (PIM) paradigm has been considered as a promising alternative to break the bottlenecks of conventional von-Neumann architecture by realizing the unity of data storage and processing in the same die. On the road toward implementing such an architecture, finding a novel memory that can support both dense data storage and efficient logic processing is the critical step. In this letter, we report a voltage-controlled magnetic tunnel junction (MTJ), which is a potential candidate for PIM implementation. Stateful Boolean logic functions can be realized with a single device through the memory-like write/read operations. The device was fabricated and characterized at room temperature. Afterwards, typical Boolean logic operations, e.g., “OR”, “AND”, and “NXOR”, were experimentally demonstrated with the fabricated MTJ device. The proposed approach opens up a new way for PIM implementation in spintronic memories.
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DOI：
10.1145/2897937.2898064
发表时间：
2016-06
期刊：
2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)
影响因子：
--
作者：
Shuangchen Li;Cong Xu;Qiaosha Zou;Jishen Zhao;Yu Lu;Yuan Xie
通讯作者：
Shuangchen Li;Cong Xu;Qiaosha Zou;Jishen Zhao;Yu Lu;Yuan Xie
影响因子：
3.2
作者：
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通讯作者：
Junwoo Lee;D. Suh;W. Park
DOI：
10.1109/iedm.2012.6479130
发表时间：
2012-12
期刊：
2012 International Electron Devices Meeting
影响因子：
--
作者：
J. G. Alzate;P. Amiri;P. Upadhyaya;S. Cherepov;Jian Zhu;Mark Lewis;Richard Dorrance;J. Katine-J.-Kati
通讯作者：
J. G. Alzate;P. Amiri;P. Upadhyaya;S. Cherepov;Jian Zhu;Mark Lewis;Richard Dorrance;J. Katine-J.-Kati
DOI：
10.1145/3123939.3124553
发表时间：
2017-10
期刊：
2017 50th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO)
影响因子：
--
作者：
Gunjae Koo;Kiran Kumar Matam;Te I;Krishnagiri Narra;Jing Li;Hung-Wei Tseng;S. Swanson;M. Annavaram
通讯作者：
Gunjae Koo;Kiran Kumar Matam;Te I;Krishnagiri Narra;Jing Li;Hung-Wei Tseng;S. Swanson;M. Annavaram
影响因子：
64.8
作者：
Borghetti, Julien;Snider, Gregory S.;Williams, R. Stanley
通讯作者：
Williams, R. Stanley