Simple and High-Effective Purification of Metallurgical-Grade Silicon Through Cu-Catalyzed Chemical Leaching
Simple and High-Effective Purification of Metallurgical-Grade Silicon Through Cu-Catalyzed Chemical Leaching
复制标题
通过铜催化化学浸出简单高效地纯化冶金级硅
DOI：
10.1007/s11837-018-3058-y
复制
发表时间：
2018-08
期刊：
影响因子：
2.6
通讯作者：
Keqiang Xie
中科院分区：
文献类型：
--
作者：
Fengshuo Xi;Shaoyuan Li;Wenhui Ma;Zudong He;Chao Geng;Zhengjie Chen;Kuixian Wei;Yun Lei;Keqiang Xie
提出并讨论了一种基于cu催化化学浸出法（CuCCL）去除大颗粒冶金级硅（MG-Si）粉中杂质的简单有效方法。采用不同的浸出方法研究了主要金属杂质（Fe、Al、Ca、Ti、Ni、V和Cu）的浸出行为。利用扫描电镜和x射线能谱对浸出前后典型的Si晶界析出物进行了观察和分析。浸出结果表明：除杂效率由高到低依次为CuCCL > HF- h2o2浸出> HF浸出；CuCCL处理后，金属杂质总浓度可由6759 ppmw降至193.41 ppmw。CuCCL引入的众多微尺度“通道”有利于杂质的去除，特别是对不溶性金属杂质，如钙和铝。结果表明，CuCCL是一种很有前途的工业纯化方法，可用于生产太阳能级硅。
A simple and effective method for the removal of impurities from large-sized particle metallurgical-grade silicon (MG-Si) powders based on Cu-catalyzed chemical leaching (CuCCL) has been proposed and discussed. The leaching behaviors of the main metallic impurities (Fe, Al, Ca, Ti, Ni, V and Cu) were investigated using various leaching approaches. The typical precipitates at Si grain boundaries before and after leaching were observed and analyzed by scanning electron microscopy and energy dispersive x-ray spectroscopy. The leaching results show that the order of impurity removal efficiency, from highest to lowest, is CuCCL > HF-H2O2leaching > HF leaching. After CuCCL, the total metal impurity concentration can be reduced from 6759 ppmw to 193.41 ppmw. The numerous micro-scale “channels” introduced by CuCCL are beneficial for the removal of impurities, especially for the non-dissolving metal impurities, such as calcium and aluminum. The results indicated that CuCCL is promising as an industrial purification method to produce solar-grade silicon.
登录
查看更多内容
影响因子：
8.8
作者：
Xiaodong Ma;Jian Zhang;Tongmin Wang;Tingju Li
通讯作者：
Xiaodong Ma;Jian Zhang;Tongmin Wang;Tingju Li
影响因子：
8.6
作者：
Lei Yun;Wenhui Ma;G. Lv;K. Wei;Shaoyuan Li;Kazuki Morita
通讯作者：
Lei Yun;Wenhui Ma;G. Lv;K. Wei;Shaoyuan Li;Kazuki Morita
影响因子：
4.2
作者：
Hu Zhang;Zhi Wang;Wenhui Ma;K. Xie;Lei Hu
通讯作者：
Hu Zhang;Zhi Wang;Wenhui Ma;K. Xie;Lei Hu
影响因子：
2.1
作者：
Maria P. Tejero-Ezpeleta;S. Buchholz;L. Mleczko
通讯作者：
Maria P. Tejero-Ezpeleta;S. Buchholz;L. Mleczko
影响因子：
1.8
作者：
Ni, Haoyin;Lu, Shijie;Chen, Caixia
通讯作者：
Chen, Caixia