Chemical kinetics mechanism for chemical mechanical polishing diamond and its related hard-inert materials
Chemical kinetics mechanism for chemical mechanical polishing diamond and its related hard-inert materials
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化学机械抛光金刚石及其相关硬惰性材料的化学动力学机理
DOI:
10.1007/s00170-017-1336-4
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发表时间:
2018-03
影响因子:
3.4
通讯作者:
He Yan
中科院分区:
文献类型:
--
作者:
Yuan Zewei;Zheng Peng;Wen Quan;He Yan
Hard-inert materials such as diamond, silicon carbide, gallium nitride, and sapphire are difficult to obtain from the smooth and damage-free surfaces efficiently required by semiconductor field. Therefore, this study proposed a chemical kinetics model to
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DOI:
10.1016/j.carbon.2015.12.001
发表时间:
2016-04
期刊:
Carbon(IF 6.196/2014/JCR 2区)
影响因子:
--
作者:
Zong W J;Cheng X;Zhang J J
通讯作者:
Zhang J J
DOI:
10.4028/www.scientific.net/msf.505-507.1225
发表时间:
2006-01
期刊:
Materials Science Forum
影响因子:
--
作者:
H. Cheng;C.C. Chen
通讯作者:
H. Cheng;C.C. Chen
影响因子:
5.1
作者:
Su Jianxiu;Chen Xiqu;Du Jiaxi;Kang Renke
通讯作者:
Su Jianxiu;Chen Xiqu;Du Jiaxi;Kang Renke
影响因子:
4.1
作者:
A. Kubota;S. Motoyama;M. Touge
通讯作者:
A. Kubota;S. Motoyama;M. Touge
DOI:
10.1115/1.4024034
发表时间:
2013-08
影响因子:
4
作者:
Z. Yuan;Zhuji Jin;Youjun Zhang;Q. Wen
通讯作者:
Z. Yuan;Zhuji Jin;Youjun Zhang;Q. Wen