The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes
The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes
复制标题
紫外发光二极管反向漏电流的传输机制
DOI：
10.1088/0256-307x/33/11/117301
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发表时间：
2016-11
期刊：
影响因子：
--
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Feng Dai;Xuefeng Zheng;Peixian Li;Xiaohui Hou;Yingzhe Wang;Yanrong Cao;Xiaohua Ma;Yue Hao
本文首先通过温度相关的电流-电压测量研究了反漏电流在380 nm紫外发光二极管中的传输机制。提出了三种可能的输运机制，即有限空间电荷传导、变范围跳变和Poole-Frenkel发射，分别解释了295 K以上的反向漏电流输运过程。随着研究的深入，排除了前两种输运机制。实验数据与Poole-Frenkel发射模型吻合较好。进一步提取了产生反漏电流的陷阱的活化能，分别为0.05 eV、0.09 eV和0.11 eV。这表明，至少有三种类型的陷阱状态位于导带的底部以下，在UV led的耗尽区。
The transport mechanisms of the reverse leakage current in the UV light-emitting diodes (380 nm) are investigated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole—Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole—Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05 eV, 0.09 eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.
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影响因子：
4
作者：
G. Venturi;A. Castaldini;A. Cavallini;M. Meneghini;E. Zanoni;Dandan Zhu;C. Humphreys
通讯作者：
G. Venturi;A. Castaldini;A. Cavallini;M. Meneghini;E. Zanoni;Dandan Zhu;C. Humphreys
影响因子：
4
作者：
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通讯作者：
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影响因子：
3.2
作者：
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通讯作者：
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