Ultraclean suspended monolayer graphene achieved by in situ current annealing
Ultraclean suspended monolayer graphene achieved by in situ current annealing
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原位电流退火实现超净悬浮单层石墨烯
DOI：
10.1088/1361-6528/28/4/045706
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发表时间：
2017-01
期刊：
影响因子：
3.5
通讯作者：
Takamatsu Hiroshi
中科院分区：
文献类型：
--
作者：
Wang Haidong;Zhang Xing;Takamatsu Hiroshi
超净石墨烯对于研究其固有输运性质或制造高性能电子器件至关重要。不幸的是，在微机电系统处理后，石墨烯污染是不可避免的。在这里，我们报告了一种原位电流退火方法来获得超净悬浮单层石墨烯。清洁后的石墨烯的电荷迁移率达到了惊人的3.8 × 105 cm2 V−1 s−1，这是迄今为止报道的最高值之一。在高分辨率电子扫描显微镜下首次记录了电流退火过程。结果表明，温度是电流退火过程中唯一的主导因素。同时，发现悬浮石墨烯的迁移率对结构缺陷高度敏感。离子辐照后石墨烯的迁移率降低了100倍以上。研究结果揭示了石墨烯电流退火的潜在机制，为制备超净石墨烯膜提供了一种有效的方法。
Ultraclean graphene is essential for studying its intrinsic transport properties or fabricating high-performance electronic devices. Unfortunately, the contamination on graphene is unavoidable after microelectromechanical system processing. Here, we report an in situ current-annealing method for achieving ultraclean suspended monolayer graphene. The charge mobility of cleaned graphene reached a surprising 3.8 × 105 cm2 V−1 s−1, one of the highest values ever reported. For the first time, the process of current annealing was recorded under a high-resolution electron scanning microscope. It was demonstrated that temperature was the only dominant factor of the current-annealing process. Meanwhile, the mobility of suspended graphene was found to be highly sensitive to structural defects. The mobility decreased by a factor of over 100 after ion irradiation on graphene. The results revealed the underlying mechanism of current annealing on graphene and provided an effective means of preparing ultraclean graphene membranes.
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