Extremely large magnetoresistance and electronic structure of TmSb
Extremely large magnetoresistance and electronic structure of TmSb
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TmSb的极大磁阻和电子结构
DOI：
10.1103/physrevb.97.085137
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发表时间：
2017-10
影响因子：
3.7
通讯作者：
Xia Tian-Long
中科院分区：
文献类型：
--
作者：
Wang Yi-Yan;Zhang Hongyun;Lu Xiao-Qin;Sun Lin-Lin;Xu Sheng;Lu Zhong-Yi;Liu Kai;Zhou Shuyun;Xia Tian-Long
我们报道了TmSb的磁输运性质和电子结构。TmSb在低温和强磁场下表现出极大的横向磁电阻和Shubnikov-de哈斯（SdH）振荡。有趣的是，从SdH振荡中观察到了由非对称自旋轨道相互作用引起的费米面分裂。角相关的SdH振荡的分析说明了每个费米面的电导率的贡献。角分辨光电子能谱（ARPES）和第一性原理计算揭示的电子结构表明在$X$点的间隙和带反转的情况下。结合从SdH振荡中提取的平凡Berry相和从Hall测量中得到的几乎相等的电子和空穴浓度，我们认为TmSb是一种拓扑平凡的半金属，所观察到的XMR源于电子-空穴补偿和高迁移率。
We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the $X$ point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.
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影响因子：
4.6
作者：
Singha R;Satpati B;Mandal P
通讯作者：
Mandal P
第一性原理计算揭示超大磁阻材料LaSb和LaBi的电荷补偿
影响因子：
3.7
作者：
Guo, Peng-Jie;Yang, Huan-Cheng;Lu, Zhong-Yi
通讯作者：
Lu, Zhong-Yi
DOI：
10.1063/1.4940924
发表时间：
2016-01
期刊：
arXiv: Materials Science
影响因子：
--
作者：
Desheng Wu;J. Liao;W. Yi;Xia Wang;Peigang Li;H. Weng;Youguo Shi;Yongqing Li;Jian-lin Luo-
通讯作者：
Desheng Wu;J. Liao;W. Yi;Xia Wang;Peigang Li;H. Weng;Youguo Shi;Yongqing Li;Jian-lin Luo-
影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
Furthmuller, J
影响因子：
41.2
作者：
Liang, Tian;Gibson, Quinn;Ong, N. P.
通讯作者：
Ong, N. P.