Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
复制标题
低功率氟等离子体对AlGaN/GaN高电子迁移率晶体管电可靠性的影响
DOI：
10.1088/1674-1056/26/1/017304
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发表时间：
2017
影响因子：
1.7
通讯作者：
Yang L
中科院分区：
文献类型：
--
作者：
Yang Ling;Zhou Xiao-Wei;Ma Xiao-Hua;Lv Ling;Zhang Jin-Cheng;Hao Yue;Yang Ling;Zhou Xiao-Wei;Ma Xiao-Hua;Lv Ling;Zhang Jin-Cheng;Hao Yue;Cao Yan-Rong;Yang L;Yang L
发现了低功率氟等离子体处理AlGaN/GaN高电子迁移率晶体管（HEMT）后出现的新的电学退化现象。饱和电流、导通电阻、阈值电压、栅漏电流和击穿电压在短时间应力作用下均发生显著变化，然后保持不变。关态应力后电子的重新分布和击穿电压的提高进一步证实了氟离子的迁移现象。这些结果表明，低功率氟注入离子处于不稳定状态。这使得AlGaN/GaN HEMT的电学性能出现早期退化。提出了低功率氟注入离子在非应力电应力下迁移和降解的新机制。低功率的氟离子会在关态应力开始时漂移，然后在栅侧附近的栅和漏之间积累。由于氟的强电负性，前部氟离子的积累将阻止后续氟离子的漂移，从而进一步减轻AlGaN/GaN HEMT电性能的劣化。
The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.
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影响因子：
4
作者：
Zhang, Yuhao;Sun, Min;Palacios, Tomas
通讯作者：
Palacios, Tomas
影响因子：
4
作者：
Maojun Wang;Li Yuan;C. Cheng;C. Beling;K. J. Chen
通讯作者：
Maojun Wang;Li Yuan;C. Cheng;C. Beling;K. J. Chen
影响因子：
4.9
作者：
Ruonan Wang;Yong Cai;W. Tang;K. Lau;K.J. Chen
通讯作者：
Ruonan Wang;Yong Cai;W. Tang;K. Lau;K.J. Chen
影响因子：
3.2
作者：
Mingxiang Wang;Li Yuan;K. J. Chen;F. Xu;B. Shen
通讯作者：
Mingxiang Wang;Li Yuan;K. J. Chen;F. Xu;B. Shen
影响因子：
4.9
作者：
Tang, Zhikai;Jiang, Qimeng;Chen, Kevin J.
通讯作者：
Chen, Kevin J.