Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition
Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition
复制标题
通过脉冲激光沉积在 Si (100) 上生长的 ZnO 外延薄膜的快速热退火增强光致发光
DOI：
10.1116/1.3207952
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发表时间：
2009-08
期刊：
影响因子：
--
通讯作者：
中科院分区：
文献类型：
--
作者：
ZnO single-crystalline films were prepared by predepositing a homobuffer layer on Si (100) substrate in a pulsed laser deposition system. The effect of short-time rapid thermal annealing under N2 and O2 ambient on the optical property was systematically studied by photoluminescence measurements from 77K to room temperature. Different from the adverse effect of the O2-assisted rapid thermal annealing on the optical quality, N2-assisted rapid thermal annealing can greatly enhance the ultraviolet emission while eliminate the deep-level emission band including separate green, yellow, and orange luminescence peaks. Such ambient-dependent photoluminescence enhancement was attributed to the elimination of oxygen interstitial in the ZnO film.
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影响因子：
4
作者：
Djurisic, AB;Leung, YH;Gwo, S
通讯作者：
Gwo, S
影响因子：
3.2
作者：
Jiandong Ye;S. Gu;S. M. Zhu;F. Qin;S. Liu;W. Liu;X. Zhou;L. Hu;R. Zhang;Yue-chun Shi;Youliao Zheng
通讯作者：
Jiandong Ye;S. Gu;S. M. Zhu;F. Qin;S. Liu;W. Liu;X. Zhou;L. Hu;R. Zhang;Yue-chun Shi;Youliao Zheng
影响因子：
4
作者：
Lin, CC;Chen, SY;Lee, HY
通讯作者：
Lee, HY
DOI：
10.1002/1521-3951(200212)234:3
发表时间：
2002-12
影响因子：
1.6
作者：
A. Zeuner;H. Alves;D. Hofmann;B. Meyer;A. Hoffmann;U. Haboeck;M. Strassburg;M. Dworzak
通讯作者：
A. Zeuner;H. Alves;D. Hofmann;B. Meyer;A. Hoffmann;U. Haboeck;M. Strassburg;M. Dworzak
影响因子：
41.2
作者：
Tsukazaki, A;Ohtomo, A;Kawasaki, M
通讯作者：
Kawasaki, M