Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation
复制标题
直接求解玻尔兹曼输运方程的非对称DG-MOSFET准弹道输运仿真研究
DOI：
10.1109/tnano.2013.2237924
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发表时间：
2013-03
影响因子：
2.4
通讯作者：
Zhang, Xing
中科院分区：
文献类型：
--
作者：
Lu, Tiao;Liu, Xiaoyan;Zhang, Pingwen;Zhang, Xing
In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs to be extended to better determine the kT-layer length. The key expression for back-scattering coefficient is still valid, but a field-dependent mean free path is needed to be taken into account.
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影响因子：
3.1
作者：
E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani
通讯作者：
E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani
影响因子：
3.1
作者：
E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud;D. Villanueva;F. Salvetti;H. Jaouen;T. Skotnicki
通讯作者：
E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud;D. Villanueva;F. Salvetti;H. Jaouen;T. Skotnicki
DOI：
10.1109/sispad.2000.871204
发表时间：
2000-09
期刊：
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
影响因子：
--
作者：
Mark Lundstrom;R. K. Smith;Supriyo Datta;Thomas Downar;Kathy Krisch
通讯作者：
Mark Lundstrom;R. K. Smith;Supriyo Datta;Thomas Downar;Kathy Krisch
DOI：
10.1109/iedm.2001.979425
发表时间：
2001-12
期刊：
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
影响因子：
--
作者：
Paul M. Solomon;Steven E. Laux
通讯作者：
Paul M. Solomon;Steven E. Laux
影响因子：
3.1
作者：
Seonghoon Jin;Massimo V. Fischetti;T. Tang
通讯作者：
Seonghoon Jin;Massimo V. Fischetti;T. Tang