A wideband fully integrated SiGe chipset for high data rate communication at 240 GHz
A wideband fully integrated SiGe chipset for high data rate communication at 240 GHz
复制标题
宽带完全集成 SiGe 芯片组,用于 240 GHz 的高数据速率通信
DOI:
10.1109/eumic.2016.7777520
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发表时间:
2016
期刊:
影响因子:
--
通讯作者:
U. R. Pfeiffer
中科院分区:
文献类型:
--
作者:
N. Sarmah;P. R. Vazquez;J. Gryzb;W. Förster;B. Heinemann;U. R. Pfeiffer
This paper presents a fully integrated direct-conversion quadrature transmitter and receiver chipset at 240 GHz in a 0.13 μm SiGe HBT technology with fT/fmaxof 350/550 GHz. This chipset is suited for applications requiring both fixed and tunable LO which is made possible due to a wideband frequency multiplier (×16) based local-oscillator (LO) signal source and a wideband on-chip antenna designed to be used with an external replaceable silicon lens. The Tx can deliver up to 6 dBm output power at 240 GHz and the 3-dB bandwidth is 40 GHz. For the Rx, the peak conversion gain is 10 dB and the NF is 15 dB while the 3-dB bandwidth is 28 GHz. The chipset is integrated in a low loss Rogers 4350B COB (chip-onboard) packaging. For communication applications where high IF bandwidth is required, stepped impedance low-pass filters with minimum group delay variations were implemented on the PCB to negate the low-pass characteristics introduced by the bondwire. The measured 6-dB IF bandwidth is 13 GHz. By using this chipset for high data rate communication, the measured EVM for BPSK modulation is 24% at 20 Gbps while the EVM is 30% at 25 Gbps. For the QPSK modulation scheme, an EVM of 24% is measured at 24 Gbps. These results are for a link of 70 cm and without calibrating the effect of the IF cables and without any channel equalization.
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影响因子:
5.4
作者:
U. R. Pfeiffer;Y. Zhao;J. Grzyb;R. Al Hadi;N.Sarmah;Neelanjan;W. Föster;H. Rücker;B. Heinemann
通讯作者:
B. Heinemann
影响因子:
4.3
作者:
N. Sarmah;J. Grzyb;K. Statnikov;S. Malz;P. R. Vazquez;W. Foerster;B. Heinemann;U. R. Pfeiffer
通讯作者:
U. R. Pfeiffer
DOI:
10.1109/rfic.2014.6851691
发表时间:
2014-06
期刊:
2014 IEEE Radio Frequency Integrated Circuits Symposium
影响因子:
--
作者:
N. Sarmah;B. Heinemann;U. Pfeiffer
通讯作者:
N. Sarmah;B. Heinemann;U. Pfeiffer
影响因子:
4.3
作者:
R. Lachner
通讯作者:
R. Lachner
DOI:
10.1109/eumc.2015.7345822
发表时间:
2014
期刊:
2015 European Microwave Conference (EuMC)
影响因子:
--
作者:
K. Statnikov;N. Sarmah;J. Grzyb;S. Malz;B. Heinemann;U. R. Pfeiffer
通讯作者:
U. R. Pfeiffer