Drastic power factor improvement by Te doping of rare earth-free CoSb(3)-skutterudite thin films.
Drastic power factor improvement by Te doping of rare earth-free CoSb(3)-skutterudite thin films.
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在本研究中，我们专注于通过射频磁控溅射对 Te 掺杂 CoSb3 薄膜进行控制，这是热电 (TE) 薄膜工业发展的一项有吸引力的技术。我们已经通过可靠的方法成功合成了溅射靶材，以获得具有受控化学计量的高质量薄膜。然后探测 TE 特性，发现可靠的 n 型行为，其特征是电传输特性较差。通过共溅射沉积实现了碲替代，并获得了功率因数的显着提高，在室温附近具有 PF ≈ 0.21 mW m−1 K−2 的有前景的值。这与Te掺杂效应导致塞贝克系数和电导率同时增加有关。然而，尽管有了如此巨大的改进，其性能仍然与块状材料相去甚远，并且需要进一步的开发来改善因薄膜格式化而降低的载流子迁移率。在本研究中，我们专注于通过射频磁控溅射对 Te 掺杂 CoSb3 薄膜进行控制，这是热电 (TE) 薄膜工业发展的一项有吸引力的技术。
In the present study, we have focused on the elaboration of control of Te-doped CoSb3 thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films. We have successfully synthesized sputtering targets with a reliable approach in order to obtain high-quality films with controlled stoichiometry. TE properties were then probed and revealed a reliable n-type behavior characterized by poor electrical transport properties. Tellurium substitution was realized by co-sputtering deposition and allowed obtaining a significant enhancement of the power factor with promising values of PF ≈ 0.21 mW m−1 K−2 near room temperature. It is related to the Te doping effect which leads to an increase of the Seebeck coefficient and the electrical conductivity simultaneously. However, despite this large improvement, the properties remained far from the bulk material and further developments are necessary to improve the carrier mobility reduced by the thin film formatting. In the present study, we have focused on the elaboration of control of Te-doped CoSb3 thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films.
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