Gate‐tunable spin valve effect in Fe 3 GeTe 2 ‐based van der Waals heterostructures
Gate‐tunable spin valve effect in Fe 3 GeTe 2 ‐based van der Waals heterostructures
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Fe 3 GeTe 2 基范德华异质结构中的栅极可调自旋阀效应
DOI：
10.1002/inf2.12371
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发表时间：
2022-09
期刊：
影响因子：
22.7
通讯作者：
Hongtao Yuan
中科院分区：
文献类型：
--
作者：
Ling Zhou;Junwei Huang;Ming Tang;Caiyu Qiu;Feng Qin;Caorong Zhang;Zeya Li;Di Wu;Hongtao Yuan
磁性隧道结(MTJ)是基于自旋阀效应的一种重要的自旋电子学器件，它促进了自旋电子学的大量应用。新一代MTJ器件的技术诉求有两个方向：利用先进的二维(2D)铁磁材料提高器件性能，或通过探索铁磁体的栅极可调磁性来扩展器件功能。基于2D磁体的最新发展，由于其尺寸减小，易于受到外部刺激(如电场)，因此可以实现可靠的门可调MTJ器件，从而揭示出具有多种功能的下一代MTJ在各种应用环境中的巨大潜力。虽然电门可调MTJ器件对于实际的自旋电子器件来说是非常理想的，但它还没有被证明。在这里，我们展示了将垂直的Fe3GeTe2/h-BN/Fe3GeTe2MTJ与电解液栅极相结合的自旋阀装置的实验实现。本征MTJ的磁阻率(MR比)为36%，证实了该器件的良好性能。通过电解液门控，Fe3GeTe2/h-BN/Fe3GeTe2MTJ的隧道磁阻比可提高2.5倍，从26%提高到65%。重要的是，MTJ的磁阻开关的磁场可以通过电选通进行调制，这为控制MTJ的磁化结构提供了一种很有前途的方法。我们的工作展示了一种门可调的MTJ装置，为门控制自旋电子器件的可能性，为执行2D磁性操作和探索创新的自旋电子学应用铺平了道路。
Magnetic tunnel junctions (MTJs), a prominent type of spintronic device based on the spin valve effect, have facilitated the development of numerous spintronic applications. The technical appeal for the next‐generation MTJ devices has been proposed in two directions: improving device performance by utilizing advanced two‐dimensional (2D) ferromagnetic materials or extending device functionalities by exploring the gate‐tunable magnetic properties of ferromagnets. Based on the recent development of 2D magnets with the ease of external stimuli, such as electric field, due to their reduced dimensions, reliable prospects for gate‐tunable MTJ devices can be achieved, shedding light on the great potential of next‐generation MTJs with multiple functionalities for various application environments. While the electrical gate‐tunable MTJ device is highly desirable for practical spintronic devices, it has not yet been demonstrated. Here, we demonstrate the experimental realization of a spin valve device by combining a vertical Fe3GeTe2/h‐BN/Fe3GeTe2MTJ with an electrolyte gate. The magnetoresistance ratio (MR ratio) of 36% for the intrinsic MTJ confirms the good performance of the device. By electrolyte gating, the tunneling MR ratio of Fe3GeTe2/h‐BN/Fe3GeTe2MTJ can be elevated 2.5 times, from 26% to 65%. Importantly, the magnetic fields at which the magnetoresistance switches for the MTJ can be modulated by electrical gating, providing a promising method to control the magnetization configuration of the MTJ. Our work demonstrates a gate‐tunable MTJ device toward the possibility for gate‐controlled spintronic devices, paving the way for performing 2D magnetism manipulations and exploring innovative spintronic applications.
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影响因子：
4.6
作者：
Wu HC;Coileáin CÓ;Abid M;Mauit O;Syrlybekov A;Khalid A;Xu H;Gatensby R;Jing Wang J;Liu H;Yang L;Duesberg GS;Zhang HZ;Abid M;Shvets IV
通讯作者：
Shvets IV
影响因子：
64.8
作者：
Xiong, ZH;Wu, D;Shi, J
通讯作者：
Shi, J
基于 Fe 3 GeTe 2 范德华同质结的从两态到多态垂直自旋阀，无间隔层
影响因子：
18.9
作者：
Hu, Ce;Zhang, Dong;Wang, Kaiyou
通讯作者：
Wang, Kaiyou
DOI：
10.1002/inf2.12077
发表时间：
2020-03
期刊：
--
影响因子：
--
作者：
Zhenhan Zhang;Zongwei Wang;Tuo Shi;C. Bi;F. Rao;Yimao Cai;Qi Liu;Huaqiang Wu;P. Zhou
通讯作者：
Zhenhan Zhang;Zongwei Wang;Tuo Shi;C. Bi;F. Rao;Yimao Cai;Qi Liu;Huaqiang Wu;P. Zhou
影响因子：
10.8
作者：
Wang, Zhe;Sapkota, Deepak;Morpurgo, Alberto F.
通讯作者：
Morpurgo, Alberto F.