Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires.
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires.
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InGaAs/InP 核壳纳米线的自晶 MOCVD 生长和显着增强的光致发光
DOI：
10.1186/s11671-018-2690-3
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发表时间：
2018-09-05
影响因子：
--
通讯作者：
Yang T
中科院分区：
文献类型：
--
作者：
Ji X;Chen X;Yang X;Zhang X;Shao J;Yang T
本文报道了采用金属有机化学气相沉积（MOCVD）技术在Si -(111)衬底上生长InGaAs/InP核壳纳米线并进行了表征。InGaAs核与InP壳材料晶格失配引起的核-壳界面应变对InP壳的生长行为有很大的影响，导致InP壳在InGaAs核周围不对称生长，甚至导致纳米线弯曲。透射电镜（TEM）测量结果表明，InP壳层与InGaAs核一致，无错配位错。此外，在77 K下的光致发光（PL）测量表明，由于表面态钝化和InP壳层导致的有效载流子约束，InGaAs/InP核壳纳米线的PL峰强度比没有InP壳的InGaAs核壳纳米线的PL峰强度提高了约100倍。本研究结果进一步加深了我们对应变核壳异质结构纳米线生长行为的理解，并为基于InGaAs/InP异质结构纳米线的Si平台光电器件的应用开辟了新的可能性。
We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs core and even to the bending of the nanowires. Transmission electron microscopy (TEM) measurements reveal that the InP shell is coherent with the InGaAs core without any misfit dislocations. Furthermore, photoluminescence (PL) measurements at 77 K show that the PL peak intensity from the InGaAs/InP core−shell nanowires displays a ∼ 100 times enhancement compared to the only InGaAs core sample without InP shell due to the passivation of surface states and effective carrier confinement resulting from InP shell layer. The results obtained here further our understanding of the growth behavior of strained core–shell heterostructure nanowires and may open new possibilities for applications in InGaAs/InP heterostructure nanowire-based optoelectronic devices on Si platform.
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