Inhomogeneous Ring Oscillator for Within-Die Variability and RTN Characterization
Inhomogeneous Ring Oscillator for Within-Die Variability and RTN Characterization
复制标题
用于管芯内可变性和 RTN 表征的非均匀环形振荡器
DOI:
10.1109/tsm.2013.2265702
复制
发表时间:
2013
影响因子:
2.7
通讯作者:
H. Onodera
中科院分区:
文献类型:
--
作者:
S. Fujimoto;A. Islam;Takashi Matsumoto;H. Onodera
This paper discusses the concept of an inhomogeneous structure for a ring oscillator (RO) to enhance the delay effect of a particular inverter stage. The frequency of the proposed inhomogeneous structure becomes a strong function of the inhomogeneous stage; thus, the variability becomes directly visible. With careful design of the inhomogeneous stage, the RO frequency can be made sensitive to a small set of transistors for characterizing transistor-by-transistor variability. Performance sensitivities of the transistors are enhanced more than 100 times that of other transistors in the RO. The proposed ROs are embedded into a 65-nm RO-array test structure, and it is verified that these ROs are highly sensitive to within-die local variability and random telegraph noise (RTN). The within-die local variability is then successfully decomposed into threshold voltage and gate length variations. Several characteristics of RTN have been successfully extracted with the proposed structure. The proposed structure is thus very useful for observation, characterization and modeling of static and dynamic transistor variations during switching operation.
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
Hidetoshi Onodera;Haruhiko Terada
通讯作者:
Haruhiko Terada
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
伊東;松本;西澤;砂川;小林;小野寺
通讯作者:
小野寺
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
A.K.M. Mahfuzul Islam;Akira Tsuchiya;Kazutoshi Kobayashi;Hidetoshi Onodera
通讯作者:
Hidetoshi Onodera