Inhomogeneous Ring Oscillator for Within-Die Variability and RTN Characterization

Inhomogeneous Ring Oscillator for Within-Die Variability and RTN Characterization
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用于管芯内可变性和 RTN 表征的非均匀环形振荡器

DOI:
10.1109/tsm.2013.2265702
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发表时间:
2013
影响因子:
2.7
通讯作者:
H. Onodera
H. Onodera
中科院分区:
工程技术4区
文献类型:
--
作者:
S. Fujimoto;A. Islam;Takashi Matsumoto;H. Onodera

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本文讨论了环形振荡器(RO)的非均匀结构的概念,以增强特定逆变级的延迟效应。所提出的非均质结构的频率成为非均质阶段的强函数;因此,可变性变得直接可见。通过精心设计的非均质级,可以使RO频率对一小组晶体管敏感,以表征逐个晶体管的可变性。与RO中的其他晶体管相比,晶体管的性能灵敏度提高了100多倍。将所提出的ROS嵌入到65 nm RO阵列测试结构中,并验证了这些RO对芯片内局部变化和随机电报噪声(RTN)高度敏感。然后,芯片内的局部变化被成功地分解为阈值电压和栅长变化。利用所提出的结构成功地提取了RTN的若干特征。因此,所提出的结构对于观察、表征和建模开关操作期间的静态和动态晶体管变化非常有用。
This paper discusses the concept of an inhomogeneous structure for a ring oscillator (RO) to enhance the delay effect of a particular inverter stage. The frequency of the proposed inhomogeneous structure becomes a strong function of the inhomogeneous stage; thus, the variability becomes directly visible. With careful design of the inhomogeneous stage, the RO frequency can be made sensitive to a small set of transistors for characterizing transistor-by-transistor variability. Performance sensitivities of the transistors are enhanced more than 100 times that of other transistors in the RO. The proposed ROs are embedded into a 65-nm RO-array test structure, and it is verified that these ROs are highly sensitive to within-die local variability and random telegraph noise (RTN). The within-die local variability is then successfully decomposed into threshold voltage and gate length variations. Several characteristics of RTN have been successfully extracted with the proposed structure. The proposed structure is thus very useful for observation, characterization and modeling of static and dynamic transistor variations during switching operation.
使用 RO 阵列测试结构表征 WID 延迟变化
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