Vertical GaN power rectifiers: interface effects and switching performance
Vertical GaN power rectifiers: interface effects and switching performance
复制标题
垂直 GaN 功率整流器：界面效应和开关性能
DOI：
10.1088/1361-6641/abca0d
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发表时间：
2020-02
影响因子：
1.9
通讯作者：
Sheng Kuang
中科院分区：
文献类型：
--
作者：
Yang Shu;Han Shaowen;Sheng Kuang
独立GaN衬底的出现使得能够开发具有高额定功率和高频率的垂直GaN on GaN器件。肖特基界面在决定垂直GaN肖特基势垒二极管的电流传输机制和正向/反向电性能方面起着重要作用。此外，鉴于其直接带隙和超短的少数载流子寿命，评估垂直GaN功率整流器的快速开关性能具有特别的意义和重要性。本文讨论了具有高质量界面和快速开关性能的垂直GaN功率整流器的工艺、物理机制和表征，包括：（a）肖特基界面的精确表征和载流子输运机制：（B）优化的金属化后退火和隧穿增强层的肖特基界面工程;（c）以高速板级测试为特征的快速反向恢复性能。研究和分析垂直GaN功率整流器的界面效应和开关特性对高效高频电力电子应用具有重要意义。
The emergence of free-standing GaN substrates enables the development of vertical GaN-on-GaN devices with high-power ratings and high frequencies. The Schottky interface plays an important role in determining the current transport mechanisms and the forward/reverse electrical performance of the vertical GaN Schottky barrier diodes. Moreover, given its direct bandgap and ultrashort minority carrier lifetime, it is of particular interest and importance to evaluate the fast switching performance of the vertical GaN power rectifiers. In this paper, we discuss the technology, physical mechanisms and characterizations of vertical GaN power rectifiers with high-quality interfaces and fast switching performances, including: (a) accurate characterization and carrier transport mechanisms of the Schottky interface; (b) Schottky interface engineering with optimized post-metallization annealing and a tunneling-enhancement layer; (c) fast reverse recovery performance that is characterized by high-speed board-level tests. The investigations and analysis on the interface effects and switching performance of the vertical GaN power rectifiers are valuable for high-efficiency and high-frequency power electronics applications.
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影响因子：
3.1
作者：
Dickerson, Jeramy R.;Allerman, Andrew A.;Wierer, Jonathan J., Jr.
通讯作者：
Wierer, Jonathan J., Jr.
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影响因子：
6.7
作者：
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通讯作者：
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影响因子：
4
作者：
F. Iucolano;F. Roccaforte;F. Giannazzo;V. Raineri
通讯作者：
F. Iucolano;F. Roccaforte;F. Giannazzo;V. Raineri
影响因子：
3.2
作者：
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通讯作者：
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影响因子：
3.2
作者：
Arehart, A. R.;Moran, B.;Ringel, S. A.
通讯作者：
Ringel, S. A.