Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
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1.5kV 4H-SiC JTE 终端中单粒子烧毁的仿真研究
DOI：
10.1109/ted.2021.3082806
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发表时间：
2021-07
影响因子：
3.1
通讯作者：
Zhao-Huan Tang
中科院分区：
文献类型：
--
作者：
Cheng-Hao Yu;Ying Wang;Meng-Tian Bao;Xingji Li;Jianqun Yang;Zhao-Huan Tang
This brief presents 2-D numerical simulation results of a single-event burnout (SEB) in a 4H-silicon carbide (SiC) junction termination extension (JTE) termination structure of a power metal-oxide-semiconductor field-effect transistor (MOSFET). Using the rated 1.5-kV JTE termination structure, the most sensitive ion's strike position to SEB is proved to be the edge of the P + /P - JTE region. Due to the severe punchthrough of the electric field, the source contact region is found to the most sensitive region to induce an SEB event. The SEB performance of the JTE termination structure with a single buffer layer or multilayer buffer is evaluated. The results show that the electric field distribution in four buffer layers (FBLs) is the most uniform to achieve the best SEB performance. Therefore, by adding an optimal FBL design to the termination region, the SEB threshold voltage can be increased to 1210 V instead of the common structure's 250 V. The SEB safe operating area of the power MOSFET with an optimal FBL can increase more than three times compared with the common one.
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作者：
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