Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control
Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control
复制标题
低载流子寿命控制的4H-SiC JBS二极管单粒子烧毁研究
DOI：
10.1109/ted.2018.2872170
复制
发表时间：
2018-12
影响因子：
3.1
通讯作者：
Cao Fei
中科院分区：
文献类型：
--
作者：
Yu Cheng-Hao;Wang Ying;Li Xing-Ji;Liu Chao-Ming;Luo Xin;Cao Fei
This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion’s strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particle with different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime ( $\tau $ ) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected.
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影响因子：
3.1
作者：
Cooper, JA;Melloch, MR;Palmour, JW
通讯作者：
Palmour, JW
DOI：
10.1016/j.microrel.2015.06.081
发表时间：
2015-08
期刊：
Microelectron. Reliab.
影响因子：
--
作者：
T. Shoji;S. Nishida;K. Hamada;H. Tadano
通讯作者：
T. Shoji;S. Nishida;K. Hamada;H. Tadano
DOI：
10.1016/j.microrel.2011.07.032
发表时间：
2011-09
期刊：
Microelectron. Reliab.
影响因子：
--
作者：
M. Zerarka;P. Austin;M. Bafleur
通讯作者：
M. Zerarka;P. Austin;M. Bafleur
影响因子：
3.1
作者：
BHATNAGAR, M;BALIGA, BJ
通讯作者：
BALIGA, BJ
影响因子：
1.8
作者：
Liu, Sandra;Titus, Jeffery L.;Berberian, Robert
通讯作者：
Berberian, Robert