Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration
Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration
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并五苯/CuPc 夹层结构的并五苯基薄膜晶体管的阈值电压显着降低
DOI：
10.1063/1.4884175
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发表时间：
2014-06
期刊：
影响因子：
1.6
通讯作者：
Zheng Hu
中科院分区：
文献类型：
--
作者：
Yun Li;Yi Shi;Xizhang Wang;Zheng Hu
研究了具有并五苯/铜(CuPc)夹心结构的并五苯基薄膜晶体管的阈值电压(VT)的显著降低。这种减少伴随着流动性的增加和亚门槛斜率的降低(S)。与传统的顶接触器件相比，镀有5 nm CuPc层的三明治器件的VT从−20.4V显著降低到−0.2V，迁移率从0.18cm2/vs增加到0.51cm2/vs，S从4.1V/dec降低到2.9V/dec。然而，通断电流比保持在105。这一增强的性能可以归因于所结合的CuPc层降低了电荷陷阱密度。结果表明，该方法简单有效地制备了高迁移率、低VT的并五苯基有机薄膜晶体管。
This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.
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