SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation
SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation
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铜辅助剥离的 SnSe 双极薄膜晶体管阵列
DOI：
10.1016/j.apsusc.2023.156517
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发表时间：
2023-01
影响因子：
6.7
通讯作者：
Chang Liu
中科院分区：
文献类型：
--
作者：
Zexin Tu;Kun Wang;Liwei Ji;Jiaxian Wan;Qiren Luo;Hao Wu;Chang Liu
SnSe是一种层状金属硫族化合物，具有潜在的双极性应用前景。然而，设备的规模受到毫米/厘米大小的二维（2D）薄片的限制。在这里，我们展示了晶圆级SnSe双极性薄膜晶体管（TFT）阵列的制备。采用原子层沉积法制备了面向a轴的SnSe薄膜。光刻和铜辅助剥离工艺有助于剥离不必要的薄膜，形成孤立的SnSe薄片。在蒸发镍作为接触电极后，成功制备了TFT阵列。通过500℃退火将SnSe的通/关电流比从103提高到104，提高了SnSe的晶体质量，空穴和电子迁移率分别提高了5倍，达到41.29和34.99 cm2V−1s−1。当SnSe通道厚度增加到50 nm时，器件表现出从对称双极性到空穴主导的行为。铜辅助剥离方法提供了一种蚀刻技术来制作图案化二维器件。
SnSe is a layered metal chalcogenide with potential ambipolar applications. However, the scale of devices is subject to limitation of milli/centi-meter-sized two-dimensinal (2D) flakes. Here, we demonstrate the preparation of wafer-scale SnSe ambipolar thin film transistor (TFT) arrays. The a-axis-oriented SnSe thin films were prepared via atomic layer deposition. The processes of lithography and copper-assisted exfoliation help to peel off unnecessary films to form isolated SnSe flakes. After evaporating nickel as contact electrodes, TFT arrays were successfully fabricated. The on/off current ratios are upgraded from 103to 104through annealing at 500 °C to improve the crystalline quality of SnSe, and both hole and electron mobilities increase fivefold to 41.29 and 34.99 cm2V−1s−1, respectively. The devices exhibit from symmetric ambipolar to hole-dominated behaviors as SnSe channel thickness increases to 50 nm. The copper-assisted exfoliation method provides an etching technique to make patterned 2D devices.
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影响因子：
15.9
作者：
S. Su;Chih-Piao Chuu;Ming-Yang Li;Chao-Ching Cheng;H. P. Wong;Lain‐Jong Li
通讯作者：
S. Su;Chih-Piao Chuu;Ming-Yang Li;Chao-Ching Cheng;H. P. Wong;Lain‐Jong Li
影响因子：
16.6
作者：
Yu’an Huang;Yu-Hao Pan;R. Yang;Lihong Bao;L. Meng;Hailan Luo;Yong-Qing Cai;Guodong Liu;Wenjuan Zhao;Zhang Zhou;Liang-Mei Wu;Zhi-Li Zhu;Ming Huang;Li-Wei Liu;Lei Liu;Peng Cheng;Kehui Wu;S. Tian;Chang-Zhi Gu;You-guo Shi;Yanqing Guo;Z. Cheng;Jiangping Hu;Lin Zhao;Guan-Hua Yang;E. Sutter;P. Sutter;Ye‐Liang Wang;W. Ji;Xingjiang Zhou;Hongjun Gao
通讯作者：
Yu’an Huang;Yu-Hao Pan;R. Yang;Lihong Bao;L. Meng;Hailan Luo;Yong-Qing Cai;Guodong Liu;Wenjuan Zhao;Zhang Zhou;Liang-Mei Wu;Zhi-Li Zhu;Ming Huang;Li-Wei Liu;Lei Liu;Peng Cheng;Kehui Wu;S. Tian;Chang-Zhi Gu;You-guo Shi;Yanqing Guo;Z. Cheng;Jiangping Hu;Lin Zhao;Guan-Hua Yang;E. Sutter;P. Sutter;Ye‐Liang Wang;W. Ji;Xingjiang Zhou;Hongjun Gao
DOI：
10.1002/pssa.201533040
发表时间：
2016-03
期刊：
physica status solidi (a)
影响因子：
--
作者：
P. K. Nair;E. Barrios-Salgado;M. Nair
通讯作者：
P. K. Nair;E. Barrios-Salgado;M. Nair
影响因子：
64.8
作者：
Zhao, Li-Dong;Lo, Shih-Han;Kanatzidis, Mercouri G.
通讯作者：
Kanatzidis, Mercouri G.
影响因子：
3.5
作者：
Yujia Zhong;Li Zhang;Wenduo Chen;Hongwei Zhu
通讯作者：
Yujia Zhong;Li Zhang;Wenduo Chen;Hongwei Zhu