Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
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短波长红外InAs/GaSb超晶格孔雪崩光电二极管
DOI：
10.1088/1674-1056/aba2e0
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发表时间：
2020-10
影响因子：
1.7
通讯作者：
Huang Yong
中科院分区：
文献类型：
--
作者：
Liu Jia-Feng;Zhang Ning-Tao;Teng Yan;Hao Xiu-Jun;Zhao Yu;Chen Ying;Zhu He;Zhu Hong;Wu Qi-Hua;Li Xin;Chen Bai-Le;Huang Yong
我们展示了两个基于金属有机化学气相沉积法生长的InAs/GaSb超晶格的短波红外雪崩光电二极管。这两种器件（即p+ n-n+和p+ nn-n+）之间的区别在于，p+ nn-n+器件具有额外的中间掺杂层，以将倍增区与吸收区分开。通过适当控制p+ nn-n+器件中的电场分布，已经实现了906 kV/cm的电场，这是p+ n-n+器件中电场的2.6倍。在-0.1V的反向偏压和77 K下，两种器件的100%截止波长均为2.25 μm。p+ n-n+和p+ nn-n+的暗电流密度分别为1.5× 10− 7 A/cm 2和1.8× 10− 8 A/cm 2，峰值响应率分别为0.35 A/W和0.40 A/W。p+ nn-n+器件的最大乘法增益为55，而p+ n-n+器件的最大乘法增益仅小于2。作为反向偏压的函数的增益特性的指数性质证实了单个载流子空穴主导的碰撞电离。
We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition. The difference between the two devices, namely, p+ n− n+ and p+ nn− n+, is that the p+ nn− n+ device possesses an additional middle-doped layer to separate the multiplication region from the absorption region. By properly controlling the electric field distribution in the p+ nn− n+ device, an electric field of 906 kV/cm has been achieved, which is 2.6 times higher than that in the p+ n− n+ device. At a reverse bias of–0.1 V at 77 K, both devices show a 100% cut-off wavelength of 2.25 μm. The p+ n− n+ and p+ nn− n+ show a dark current density of 1.5× 10− 7 A/cm 2 and 1.8× 10− 8 A/cm 2, and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5 μm, respectively. A maximum multiplication gain of 55 is achieved in the p+ nn− n+ device while the value is only less than 2 in the p+ n− n+ device. Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.
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影响因子：
4
作者：
Banerjee, Koushik;Ghosh, Siddhartha;Grein, Christoph
通讯作者：
Grein, Christoph
DOI：
10.1109/jstqe.2008.918313
发表时间：
2008-07-01
影响因子：
4.9
作者：
David, J. P. R.;Tan, C. H.
通讯作者：
Tan, C. H.
影响因子：
2.1
作者：
James E. Beck;C. Wan;M. Kinch;J. Robinson;P. Mitra;R. Scritchfield;F. Ma;J. Campbell
通讯作者：
James E. Beck;C. Wan;M. Kinch;J. Robinson;P. Mitra;R. Scritchfield;F. Ma;J. Campbell
DOI：
10.1117/12.628637
发表时间：
2005-06
期刊：
--
影响因子：
--
作者：
A. Rogalski
通讯作者：
A. Rogalski
影响因子：
3.2
作者：
SMITH, DL;MAILHIOT, C
通讯作者：
MAILHIOT, C