Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments
Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments
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热处理和化学处理下紫外发光二极管 (UV-LED) 发光强度提高的机制
DOI：
10.1109/jphot.2019.2950049
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发表时间：
2019-10
影响因子：
2.4
通讯作者：
Ye Jichun
中科院分区：
文献类型：
--
作者：
Sheikhi Moheb;Guo Wei;Dai Yijun;Cui Mei;Hoo Jason;Guo Shiping;Xu Liang;Liu Jianzhe;Ye Jichun
本文研究了热退火和化学钝化对紫外发光二极管（UV-LED）光电性能的影响。在10 mA的电流水平下，KOH处理和热退火的LED的电致发光（EL）强度分别比制造的LED提高了48%和81%。UV-LED的阴极发光（CL）映射证实了表面处理后的非辐射复合中心的密度没有变化，并且由于缺乏表面原子迁移的能量，表面形貌没有明显的变化。然而，拉曼光谱表明热处理和化学处理后薄膜内部的压缩应变松弛，并且导电原子力显微镜（c-AFM）也示出了KOH钝化后的漏电流降低，这是UV-LED的发光特性改善的原因。
In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatment and thermal annealing increased by 48% and 81%, respectively compared to as-fabricated LED under current level of 10 mA. Cathodoluminescence (CL) mapping of UV-LEDs confirmed no variation of the density of the non-radiative recombination centers after surface treatments, and no obvious change in surface morphology was identified due to lacking of energy for surface atom migration. However, Raman spectroscopy indicates a relaxation of compressive strains inside the thin film after both thermal and chemical treatments, and conductive atomic force microscopy (c-AFM) also illustrated reduced leakage current after KOH passivation, which are responsible for the improved luminescence properties of UV-LEDs.
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影响因子：
4.1
作者：
Lianhong Yang;Baohua Zhang;Yanqing Li;Dunjun Chen
通讯作者：
Lianhong Yang;Baohua Zhang;Yanqing Li;Dunjun Chen
影响因子：
1.6
作者：
S. Mohammad
通讯作者：
S. Mohammad
影响因子：
3.1
作者：
Binari, SC;Ikossi, K;Henry, RL
通讯作者：
Henry, RL
影响因子：
6.7
作者：
G. Sarau;M. Heilmann;M. Latzel;S. Christiansen
通讯作者：
G. Sarau;M. Heilmann;M. Latzel;S. Christiansen
影响因子：
3.2
作者：
S. Keller;C. Schaake;N. Fichtenbaum;C. Neufeld;YiFeng Wu;K. Mcgroddy;A. David;S. Denbaars;
通讯作者：
S. Keller;C. Schaake;N. Fichtenbaum;C. Neufeld;YiFeng Wu;K. Mcgroddy;A. David;S. Denbaars;