Characterisation of SiPM Photon Emission in the Dark.
Characterisation of SiPM Photon Emission in the Dark.
复制标题
SIPM光子发射在黑暗中的表征。
DOI：
10.3390/s21175947
复制
发表时间：
2021-09-04
期刊：
影响因子：
--
通讯作者：
Zhang G
中科院分区：
文献类型：
--
作者：
McLaughlin JB;Gallina G;Retière F;De St Croix A;Giampa P;Mahtab M;Margetak P;Martin L;Massacret N;Monroe J;Patel M;Raymond K;Roiseux J;Xie L;Zhang G
在本文中，我们报告了在黑暗条件下产生的雪崩脉冲中硅光电倍增管（sipm）的光子发射，其主要目的是更好地理解下一代，大面积，基于sipm的物理实验的相关系统。在TRIUMF开发了一种新的光谱和成像分析设备，用于测量nEXO中微子双β衰变实验中被认为是光传感器候选的两个SiPMs：一个Fondazione Bruno Kessler (FBK) VUV-HD低场（LF）低后脉冲（Low AP） （VUV-HD3） SiPM和一个Hamamatsu Photonics K.K. (HPK) VUV4多像素光子计数器（MPPC）发出的光。在450 - 1020nm的波长范围内，用不同的过电压对它们的光发射进行了光谱测量。对于FBK VUV-HD3，在V的过电压下，我们测量了二次光子产率（每个电荷载流子发射的光子数）。FBK VUV-HD3的发射光谱具有与薄膜干涉相一致的干涉图样。此外，FBK VUV-HD3的发射显微镜图像（EMMIs）显示，在SiPM表面上随机分布着少量光强增加的高度局部化区域（热点）。对于HPK VUV4 MPPC，在V过电压下，我们测量了二次光子产率为。与FBK VUV-HD3相比，HPK VUV4的发射光谱没有显示干涉图案，可能是由于表面涂层较薄。与FBK VUV-HD3相比，HPK VUV4的emmi也显示出更多的热点，特别是在设备的一个角落。由于测量波长范围仅为1020nm，因此与以往的研究相比，本文报道的光子产率可能受到限制。
In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark conditions, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emissions were taken with varying over-voltage in the wavelength range of 450–1020 nm. For the FBK VUV-HD3, at an over-voltage of V, we measured a secondary photon yield (number of photons () emitted per charge carrier ()) of . The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of V, we measured a secondary photon yield of . In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 did not show an interference pattern—likely due to a thinner surface coating. The EMMIs of the HPK VUV4 also revealed a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device. The photon yield reported in this paper may be limited if compared with the one reported in previous studies due to the measurement wavelength range, which is only up to 1020 nm.
登录
查看更多内容
影响因子：
3.1
作者：
Akil, N;Kerns, SE;Charles, JP
通讯作者：
Charles, JP
影响因子：
1.3
作者：
Boone, K.;Iwai, Y.;Rethmeier, C.
通讯作者：
Rethmeier, C.
DOI：
10.1016/j.nima.2020.164648
发表时间：
2021-01-01
影响因子：
1.4
作者：
Falcone, A.;Andreani, A.;Zutshi, V
通讯作者：
Zutshi, V
影响因子：
3.1
作者：
Gallina, G.;Retiere, F.;Zhang, G.
通讯作者：
Zhang, G.
影响因子：
4
作者：
Jackson, JC;Hurley, PK;Morrison, AP
通讯作者：
Morrison, AP