Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts.
Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts.
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DOI：
10.1021/acs.nanolett.1c03625
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发表时间：
2022-02-09
期刊：
影响因子：
10.8
通讯作者：
Vera-Marun IJ
中科院分区：
文献类型：
--
作者：
Guarochico-Moreira VH;Sambricio JL;Omari K;Anderson CR;Bandurin DA;Toscano-Figueroa JC;Natera-Cordero N;Watanabe K;Taniguchi T;Grigorieva IV;Vera-Marun IJ
自旋电子学涉及低维电子系统的发展，在量子计算中有潜在的用途。在石墨烯中，在通过封装和减少杂质来改善自旋输运特性方面已经取得了显著进展，但是通过针孔和石墨烯沟道的掺杂的标准二维（2D）隧道接触的影响仍然难以消除。在这里，我们报告的观察自旋注入和可调自旋信号在完全封装的石墨烯，使货车德瓦尔斯异质结构与一维（1D）的接触。这种架构防止了接触的显著掺杂，实现了高质量的石墨烯通道，目前迁移率高达130 000 cm 2 V-1 s-1，自旋扩散长度接近20 μm。纳米级宽的1D接触允许在室温和低温下进行自旋注入，后者表现出与2D隧道接触相当的效率。在低温下，自旋信号可以通过静电门控增强多达一个数量级，从而增加新的功能。
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tunable spin signal in fully encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130 000 cm2 V–1 s–1 and spin diffusion lengths approaching 20 μm. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.
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