Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
复制标题
低温生长掺镁GaN薄膜中残留碳杂质的补偿效应研究
DOI：
10.1063/1.4873957
复制
发表时间：
2014-04
影响因子：
3.2
通讯作者：
Yang, H.
中科院分区：
文献类型：
--
作者：
Zhang, S. M.;Wang, H.;Zhu, J. J.;Yang, H.
研究了非故意掺杂的碳杂质对低温生长的Mg掺杂GaN薄膜的电阻率和黄光发光的影响。发现Mg掺杂GaN薄膜的电阻率与残余碳杂质浓度密切相关，这可能归因于碳杂质的补偿效应。碳杂质由于其相对低的形成能，可以优先形成深施主络合物CN-0 N。该配合物是MgGa受体的有效补偿中心，也是光致发光光谱中诱导YL的有效中心。因此，只有当残余碳杂质浓度足够低时才能获得低电阻率LT生长的p型GaN膜，这可以解释为什么当在早期报道中报道的LT生长的Mg掺杂GaN膜中使用相对较高的压力、温度或NH3/TMGa流速比时，更容易获得具有较低电阻率的LT P-GaN膜。
The influence of unintentionally doped carbon impurities on electrical resistivity and yellow luminescence (YL) of low-temperature (LT) grown Mg doped GaN films is investigated. It is found that the resistivity of Mg doped GaN films are closely related to the residual carbon impurity concentration, which may be attributed to the compensation effect of carbon impurities. The carbon impurity may preferentially form deep donor complex CN-ON resulting from its relatively low formation energy. This complex is an effective compensate center for MgGa acceptors as well as inducing YL in photoluminescence spectra. Thus, the low resistivity LT grown p-type GaN films can be obtained only when the residual carbon impurity concentration is sufficiently low, which can explain why LT P-GaN films with lower resistivity were obtained more easily when relatively higher pressure, temperature, or NH3/TMGa flow rate ratio were used in the LT grown Mg doped GaN films reported in earlier reports.
登录
查看更多内容
影响因子：
1.8
作者：
Y. Xian;Shanjin Huang;Zhiyuan Zheng;B. Fan;Zhisheng Wu;Hao Jiang;Gang Wang
通讯作者：
Y. Xian;Shanjin Huang;Zhiyuan Zheng;B. Fan;Zhisheng Wu;Hao Jiang;Gang Wang
影响因子：
8.6
作者：
Demchenko, D. O.;Diallo, I. C.;Reshchikov, M. A.
通讯作者：
Reshchikov, M. A.
影响因子：
3.2
作者：
Seager, CH;Wright, AF;Götz, W
通讯作者：
Götz, W
影响因子：
1.8
作者：
P. Kozodoy;S. Keller;S. Denbaars;U. Mishra
通讯作者：
P. Kozodoy;S. Keller;S. Denbaars;U. Mishra
影响因子：
4
作者：
Rong Zhang;T. Kuech
通讯作者：
Rong Zhang;T. Kuech