Study on effects of the feed on AFM-based nano-scratching process using MD simulation
Study on effects of the feed on AFM-based nano-scratching process using MD simulation
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MD模拟研究进料对AFM纳米划伤过程的影响
DOI：
10.1016/j.commatsci.2006.10.020
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发表时间：
2007-07
影响因子：
3.3
通讯作者：
Dong, Shen
中科院分区：
文献类型：
--
作者：
Liang, Yingchun;Yan, Yongda;Sun, Tao;Dong, Shen
原子力显微镜（AFM）是一种功能强大、用途广泛的工具，它能够利用纳米划痕法制造纳米电子器件和其他纳米器件。为了更深入地理解基于原子力显微镜的纳米划痕过程，采用分子动力学（MD）模拟方法。采用莫尔斯函数对模拟原子力显微镜金刚石针尖的刚性金字塔工具与铜样品之间的相互作用力进行建模。两个相邻的划痕试验在不同的进料下进行，模拟多次划痕试验。讨论了进料对刮擦过程的影响。结果表明，进给量对已加工表面的变形、划痕深度、划痕力和划痕势能有显著影响。揭示了弛豫过程在AFM多重纳米划痕过程MD模拟中的重要作用，在分析势能变化时不能忽略。
AFM is a powerful and versatile tool which has the ability to fabricate nanoelectronics and other nanoparts using nano-scratching method. To achieve a deeper understanding on AFM-based nano-scratching process, molecular dynamic (MD) simulation approach is employed. Interactive forces between a rigid pyramidal tool simulating an AFM diamond tip and a copper sample are modeled by the Morse function. Two adjacent scratching tests are carried out at different feeds simulating the multiple scratching tests. Effects of the feed on the scratching process are discussed. Results show that the feed has a significant effect on the deformation of the machined surface, the scratching depth, scratching forces and potential energy. The important effect of the relax process in the MD simulation of AFM-based multiple nano-scratching processes is exhibited, which cannot be ignored when analyzing the variation of the potential energy.
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影响因子：
6.7
作者：
Yongda Yan;T. Sun;S. Dong;Xichun Luo;Yingchun Liang
通讯作者：
Yongda Yan;T. Sun;S. Dong;Xichun Luo;Yingchun Liang
DOI：
10.4028/www.scientific.net/kem.259-260.577
发表时间：
2003-12
期刊：
Key Engineering Materials
影响因子：
--
作者：
T. Sun;Yongda Yan;J. Xia;S. Dong;Yingchun Liang;K. Cheng
通讯作者：
T. Sun;Yongda Yan;J. Xia;S. Dong;Yingchun Liang;K. Cheng
影响因子：
3.5
作者：
Zone-Ching Lin;Jen-Ching Huang
通讯作者：
Zone-Ching Lin;Jen-Ching Huang
影响因子：
3.5
作者：
Chen, YJ;Hsu, JH;Lin, HN
通讯作者：
Lin, HN
影响因子：
5
作者：
Zhang, LC;Tanaka, H
通讯作者：
Tanaka, H