Direct LED writing of submicron resist patterns: Towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays
Direct LED writing of submicron resist patterns: Towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays
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亚微米光刻胶图案的直接 LED 写入：面向制造可单独寻址的 InGaN 亚微米条形 LED 阵列
DOI：
10.1007/s12274-014-0545-5
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发表时间：
2014
期刊：
影响因子：
9.9
通讯作者：
Gong Z
中科院分区：
文献类型：
--
作者：
Gong Z
展示了具有可单独寻址能力的亚微米条形InGaN发光二极管（LED）阵列。限定发射图案的关键亚微米条金属电极通过以无掩模方式的直接LED写入形成。可单独寻址的亚微米条纹LED在电气特性方面表现出卓越的性能（典型开启电压为3 V，工作稳定性和3 mA时高达28 μW的功率输出）。与传统的宽尺寸LED不同，亚微米条纹LED的效率下降被显著抑制-事实上，对于高达100 A/cm 2的电流密度没有效率下降。此外，亚微米条带LED显示出较低的发射波长的温度依赖性偏移。横向发射宽度随着注入电流的增加而增加，导致比金属亚微米条带电极更宽的横向发射尺寸。分析了这些现象的基本物理原理。这种亚微米条纹LED阵列在纳米光子学和生物传感方面开辟了有前途的应用。
Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.
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影响因子：
4
作者：
Jeon, CW;Gu, E;Dawson, MD
通讯作者：
Dawson, MD
影响因子：
3.8
作者：
D. Elfström;B. Guilhabert;J. McKendry;S. Poland;Z. Gong;D. Massoubre;E. Richardson;B. Rae;G. Valentine;G. Blanco-Gomez;E. Gu;J. Cooper;R. Henderson;M. Dawson
通讯作者：
D. Elfström;B. Guilhabert;J. McKendry;S. Poland;Z. Gong;D. Massoubre;E. Richardson;B. Rae;G. Valentine;G. Blanco-Gomez;E. Gu;J. Cooper;R. Henderson;M. Dawson
可寻址、大面积纳米级有机发光二极管。
影响因子：
13.3
作者：
Scott P. Price;Joel Henzie;Teri W. Odom
通讯作者：
Teri W. Odom
影响因子：
1.7
作者：
Cao, XA;Stokes, EB;Walker, D
通讯作者：
Walker, D