Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect.
Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect.
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DOI：
10.1007/s40820-021-00694-4
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发表时间：
2021-08-03
影响因子：
26.6
通讯作者：
Zhu B
中科院分区：
文献类型：
--
作者：
Liang K;Li D;Ren H;Zhao M;Wang H;Ding M;Xu G;Zhao X;Long S;Zhu S;Sheng P;Li W;Lin X;Zhu B
采用喷墨印刷的方法，成功制备出了透明高性能薄膜晶体管（TFT），其半导体通道为氧化铟锡（ITO）。通过深度光谱分析研究了ITO/Al 2 O3沟道/电介质界面处的能带排列。基于ITO TFT的全印刷n型金属氧化物半导体逆变器在3 V的低电源电压下表现出极高的增益181，有望应用于先进的电子器件和电路。在线版本包含补充材料，可通过10.1007/s40820-021-00694-4获得。由基于溶液的印刷技术生产的金属氧化物薄膜晶体管（TFT）可以导致低成本的大面积电子器件。然而，由于“咖啡环”效应引起的薄膜均匀性差，目前印刷器件的性能不如基于真空的方法。在这里，我们报告了一种新的方法来打印高性能的铟锡氧化物（ITO）为基础的TFT和逻辑逆变器，利用这种臭名昭著的效果。ITO具有高导电性，通常用作电极材料。然而，通过将薄膜厚度减小到纳米级，可以有效地降低ITO的载流子浓度，以实现作为晶体管中的有源沟道的新应用。咖啡环中心的ITO膜（约10 nm厚）用作半导体通道，而厚ITO脊（>18 nm厚）用作接触电极。完全喷墨印刷的ITO TFT表现出34.9 cm 2 V−1 s−1的高饱和迁移率和105 mV dec−1的低亚阈值摆幅。此外，在10，000 s电压偏置测试后，器件在正偏置光照应力（PBIS，ΔVth = 0.31 V）和负偏置光照应力（NBIS，ΔVth = −0.29 V）下表现出优异的电稳定性。更值得注意的是，基于ITO TFT的全印刷n型金属氧化物半导体（NMOS）逆变器在3 V的低电源电压下表现出极高的增益181，有望用于先进的电子应用。在线版本包含补充材料，可通过10.1007/s40820-021-00694-4获得。
Fully inkjet-printed transparent high-performance thin-film transistors (TFTs) with ultrathin indium tin oxide (ITO) as semiconducting channels were achieved. The energy band alignment at ITO/Al2O3 channel/dielectric interface was investigated by in-depth spectroscopy analysis. Fully printed n-type metal–oxide–semiconductor inverters based on ITO TFTs exhibited extremely high gain of 181 at a low-supply voltage of 3 V, promising for applications in advanced electronic devices and circuits. The online version contains supplementary material available at 10.1007/s40820-021-00694-4. Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-ring” effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V−1 s−1 and a low subthreshold swing of 105 mV dec−1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔVth = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔVth = −0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal–oxide–semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications. The online version contains supplementary material available at 10.1007/s40820-021-00694-4.
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影响因子：
17.1
作者：
Lee, Sang Yeon;Kim, Jinseo;Seo, Hyungtak
通讯作者：
Seo, Hyungtak
影响因子：
3.2
作者：
Luo, S. N.;Kono, A.;Shoji, F.
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影响因子：
56.9
作者：
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影响因子：
41.2
作者：
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影响因子：
64.8
作者：
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通讯作者：
Witten, TA