Novel SiOC nanocomposites for high-yield preparation of ultra-large-scale SiC nanowires
Novel SiOC nanocomposites for high-yield preparation of ultra-large-scale SiC nanowires
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用于高产制备超大规模 SiC 纳米线的新型 SiOC 纳米复合材料
DOI：
10.1088/0957-4484/21/38/385601
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发表时间：
2010-08
期刊：
影响因子：
3.5
通讯作者：
Bai, Hongwei
中科院分区：
文献类型：
--
作者：
Geng, Xin;Zhu, Ji;ong;Zhang, Tao;Bai, Hongwei
以工业硅溶胶和蔗糖为原料，通过简单的合成路线成功地合成了新型SiOC纳米复合材料。采用热重法和差示扫描量热法研究了SiOC纳米复合材料的形成。采用傅里叶变换红外光谱、X射线荧光光谱、X射线光电子能谱、X射线衍射、扫描电子显微镜和透射电子显微镜对合成的纳米复合材料进行了表征。结果表明，所合成的复合材料为非晶态，具有纳米级的SiO2和碳的紧密堆积的微观结构。SiOC纳米复合材料表现出非常高的反应性，并且可以在1200 °C下退火以产生SiC纳米晶体，该温度比通过热力学计算获得的值低约300 °C。在1500 °C和Ar气氛下对合成的SiOC纳米复合材料进行直接退火，制备出了高质量的超大尺寸β-SiC纳米线，SiC纳米线的产率高达59%。SiC纳米线沿着[111]方向生长，直径均匀，约为100 nm。实验结果表明，SiO2和碳在纳米尺度上的紧密接触对SiC纳米线的高产率起着至关重要的作用。本工作为大规模制备高质量的SiC纳米线提供了一种有效的策略。
Novel SiOC nanocomposites were successfully synthesized from commercial silica sol and sucrose via a simply designed route. The formation of SiOC nanocomposites was studied using thermogravimetry and differential scanning calorimetry. The synthesized nanocomposites were characterized by Fourier transform infrared spectroscopy, x-ray fluorescence spectrometer, x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results indicate that the synthesized composites are amorphous in nature and homogeneous with the microstructure of close packed SiO2 and carbon at nanoscale. The SiOC nanocomposites exhibit very high reactivity and can be annealed to produce SiC nanocrystals at 1200 °C which is about 300 °C lower than the value obtained by thermodynamic calculation. Ultra-large-scale β-SiC nanowires with high quality were prepared by directly annealing the synthesized SiOC nanocomposites at 1500 °C under Ar atmosphere, where the yield of SiC nanowires was up to 59%. The SiC nanowires grow along the [111] direction with highly uniform diameters of about 100 nm. Experimental results indicate that the close contact between SiO2 and carbon at nanoscale plays a vital role in the high yield of SiC nanowires. The present work provides an efficient strategy for the large scale production of high-quality SiC nanowires.
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影响因子：
1.8
作者：
G. Meng;Zhangzhang Cui;Lei Zhang;F. Phillipp
通讯作者：
G. Meng;Zhangzhang Cui;Lei Zhang;F. Phillipp
影响因子：
4
作者：
Deng, S. Z.;Li, Z. B.;She, J. C.
通讯作者：
She, J. C.
影响因子：
4
作者：
Shim, Hyun Woo;Huang, Hanchen
通讯作者：
Huang, Hanchen
影响因子：
6.2
作者：
Lee, Jin-Seok;Byeun, Yun-Ki;Choi, Sung-Churl
通讯作者：
Choi, Sung-Churl
DOI：
10.1007/s11663-999-0059-9
发表时间：
1999-04
期刊：
Metallurgical and Materials Transactions B
影响因子：
--
作者：
A. Agarwal;U. Pad
通讯作者：
A. Agarwal;U. Pad