Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor.
Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor.
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实现二维金属间半导体中孤立缺陷的五元电荷态
DOI：
10.1093/nsr/nwab070
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发表时间：
2022-03
影响因子：
20.6
通讯作者：
Chen L
中科院分区：
文献类型：
--
作者：
Gou J;Xia B;Wang X;Cheng P;Wee ATS;Duan W;Xu Y;Wu K;Chen L
创建和操纵半导体中孤立缺陷的多个电荷态对于孤立缺陷电子学至关重要，但从根本上受到库仑定律的限制。实现这一目标具有挑战性，因为相当大的带隙所需的局域化和低充电能量所需的离域化要求相互矛盾。在这里，利用扫描隧道显微镜/光谱学实验和第一原理计算，我们实现了二维金属间半导体 Sn2Bi 中孤立缺陷的奇异五元电荷态。我们还观察到超低缺陷充电能量随电荷数量次线性增加，而不是表现出通常的二次行为。我们的工作提出了一条通过设计金属间半导体来构建多个缺陷电荷态的有前途的途径，并为开发具有基于电荷的量子态的量子器件开辟了新的机会。在二维金属间半导体中实现和操纵孤立缺陷的五元电荷态，显示出异常离域的缺陷态和超低的充电能量，这表明在基于电荷的量子位中的可能应用。
Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics, but is fundamentally limited by Coulomb's law. Achieving this objective is challenging, due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy. Here, using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations, we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi. We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior. Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors, and opens new opportunities for developing quantum devices with charge-based quantum states. Quinary charge states of solitary defects are realized and manipulated in 2D intermetallic semiconductor, displaying unusually delocalized defect states and ultralow charging energy, suggesting possible application in charge-based qubits.
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影响因子：
19.6
作者：
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通讯作者：
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作者：
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通讯作者：
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作者：
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