Low voltage, high speed and small area in-plane MEMS switch

Low voltage, high speed and small area in-plane MEMS switch
复制标题

低电压、高速、小面积面内MEMS开关

DOI:
10.1088/1361-6439/ab1635
复制
发表时间:
2019-05
影响因子:
2.3
通讯作者:
尤政
尤政
中科院分区:
工程技术4区
文献类型:
--
作者:
边潍;赵嘉昊;尤政

文献摘要

参考文献

相似文献

静电共面微机电系统(MEMS)继电器/开关因其低功耗、工艺简单而得到广泛应用。然而,与平面外设计相比,平面内设计通常遭受高吸合电压,因为体硅工艺的特征尺寸限制了驱动电极之间的差距。为了提高驱动力和降低吸合电压,通常必须牺牲面积成本和速度。平衡吸合电压、速度和面积成本对于MEMS继电器/开关是困难的,但在许多实际应用中是必不可少的。梳状结构有望缓解这一矛盾。本文将梳状结构与悬臂梁结构相结合。结果表明,吸合电压随着器件的质量和面积的减小而减小。介绍了一种新型的静电横向MEMS开关。实验表明,12 V的吸合电压,120秒的开关时间与28 V的驱动电压在大气压下,和小面积使用传统的体硅工艺制造。
Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely applied for their low power consumption and simple process. However, compared to the out-of-plane designs, in-plane designs usually suffer from high pull-in voltage, since the feature size of the bulk-silicon process limits the gap between the driving electrodes. Area cost and speed usually have to be sacrificed to enhance the driving force and decrease the pull-in voltage. Balancing the pull-in voltage, speed and area cost is difficult for MEMS relays/switches but is essential in many practical applications. Comb structure is promising to relieve this contradiction. In this paper, we integrated the comb structure with the cantilever structure. As a result, the pull-in voltage decreased with the decreasing of the mass and area cost. A novel electrostatic lateral MEMS switch was introduced. The experiments have shown that 12 V pull-in voltage, 120 s switching time with a 28 V driving voltage at atmospheric pressure, and small area were fabricated using a conventional bulk-silicon process.
DOI: 10.1109/memsys.2011.5734540
发表时间: 2011-03
期刊: 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems
影响因子: --
作者:
F. M. Ozkeskin;S. Choi;K. Sarabandi;Y. Gianchandani
通讯作者: F. M. Ozkeskin;S. Choi;K. Sarabandi;Y. Gianchandani
DOI: 10.1016/s0924-4247(98)00264-7
发表时间: 1999-03-09
影响因子: 4.6
作者:
Schimkat, J
通讯作者: Schimkat, J
DOI: 10.1088/0960-1317/23/10/103001
发表时间: 2013-09
影响因子: 2.3
作者:
Benjamin F Toler;R. Coutu;J. McBride
通讯作者: Benjamin F Toler;R. Coutu;J. McBride
DOI: 10.1109/sensor.2005.1496636
发表时间: 2005-06
期刊: The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.
影响因子: --
作者:
Il-Joo Cho;Taeksang Song;Sang-Hyun Baek;E. Yoon
通讯作者: Il-Joo Cho;Taeksang Song;Sang-Hyun Baek;E. Yoon
DOI: 10.1088/0022-3727/48/24/245503
发表时间: 2015-05
期刊: Journal of Physics D: Applied Physics
影响因子: --
作者:
Farid Tajaddodianfar;H. N. Pishkenari;M. Yazdi;E. M. Miandoab
通讯作者: Farid Tajaddodianfar;H. N. Pishkenari;M. Yazdi;E. M. Miandoab