Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
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DOI：
10.1007/s11671-007-9103-3
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发表时间：
2007-11-06
影响因子：
--
通讯作者：
Salamo G
中科院分区：
文献类型：
--
作者：
Liang B;Wang ZM;Sablon K;Mazur YI;Salamo G
用分子束外延技术在GaAs(100)衬底、取向角为2°的[01−1]和GaAs(N11)B(n=9，7，5)衬底上同时生长了InAs/GaAs异质结。当衬底错向角从0°增加到15.8°时，表面形貌、光致发光和时间分辨光致发光都显示出明显的从量子点到量子阱的演化过程。这一演化揭示了InAs量子点的临界厚度增加和形成延迟，这可以用热平衡模型来解释，这是由于错误取向的衬底表面的应变松弛效率较低。
InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01−1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100), which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.
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DOI：
10.1016/s0921-5107(99)00568-1
发表时间：
2000-05-01
期刊：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
影响因子：
--
作者：
Sanguinetti, S;Chiantoni, G;Main, PC
通讯作者：
Main, PC
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
4
作者：
Wang, ZM;Seydmohamadi, S;Salamo, GJ
通讯作者：
Salamo, GJ
影响因子：
--
作者：
Henini, M.
通讯作者：
Henini, M.
影响因子：
3.7
作者：
Moll, N;Scheffler, M;Pehlke, E
通讯作者：
Pehlke, E