InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method
InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method
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分子束外延法在生长过程中通过原位退火和离子辐照自诱导生长InGaN纳米柱
DOI：
10.1016/j.apsusc.2017.06.113
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发表时间：
2017-11
影响因子：
6.7
通讯作者：
Zheng Youdou
中科院分区：
文献类型：
--
作者：
Xue Junjun;Cai Qing;Zhang Baohua;Ge Mei;Chen Dunjun;Zheng Jianguo;Zhi Ting;Tao Zhikuo;Chen Jiangwei;Wang Lianhui;Zhang Rong;Zheng Youdou
Incubation and shape transition are considered as two essential processes for nucleating of self-assembly InGaN nanocolumns (NCs) in traditional way. We propose a new approach for nuclei forming directly by in-situ annealing and ion irradiating the InGaN template during growing process. The nanoislands, considered as the nuclei of NCs, were formed by a combinational effect of thermal and ion etching (TIE), which made the gaps of the V-pits deeper and wider. On account of the decomposition of InGaN during TIE process, more nitride-rich amorphous alloys would intent to accumulate in the corroded V-pits. The amorphous alloys played a key role to promote the following growth from 2D regime into Volmer-Weber growth regime so that the NC morphology took place, rather than a compact film. As growth continued, the subsequently epitaxial InGaN alloys on the annealed NC nuclei were suffered in biaxial compressive stress for losing part of indium content from the NC nuclei during the TIE process. Strain relaxation, accompanied by thread dislocations, came up and made the lattice planes misoriented, which prevented the NCs from coalescence into a compact film at later period of growing.
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影响因子：
6.7
作者：
R. Oliver;C. Nörenberg;M. G. Martı́n;A. Crossley;M. R. Castell;G. Briggs
通讯作者：
R. Oliver;C. Nörenberg;M. G. Martı́n;A. Crossley;M. R. Castell;G. Briggs
影响因子：
1.4
作者：
C. Vartuli;S. Pearton;C. Abernathy;J. MacKenzie;E. Lambers;J. Zolper
通讯作者：
C. Vartuli;S. Pearton;C. Abernathy;J. MacKenzie;E. Lambers;J. Zolper
影响因子：
1.5
作者：
Guangxu Ju;S. Fuchi;M. Tabuchi;Y. Takeda
通讯作者：
Guangxu Ju;S. Fuchi;M. Tabuchi;Y. Takeda
影响因子：
9.4
作者：
Zhiqing Yang;M. Chisholm;G. Duscher;Xiuliang Ma;S. Pennycook
通讯作者：
Zhiqing Yang;M. Chisholm;G. Duscher;Xiuliang Ma;S. Pennycook
影响因子：
2.8
作者：
M. A. Rana;T. Osipowicz;Hoi Wai Choi;M. Breese;S. Chua
通讯作者：
M. A. Rana;T. Osipowicz;Hoi Wai Choi;M. Breese;S. Chua