Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition
Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition
复制标题
重复大电流脉冲条件下CS-MCT非同时触发失效
DOI：
10.1109/tdmr.2020.2965980
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发表时间：
2020-03
影响因子：
2
通讯作者：
Yijun Shi
中科院分区：
文献类型：
--
作者：
Wanjun Chen;Yajie Xin;Kemeng Zhang;Cao Deng;Qi Zhou;Xiaochuan Deng;Zhaoji Li;Bo Zhang;Huiling Zuo;Qijun Zhou;Wuhao Gao;Yun Xia;Chao Liu;Hong Tao;Yawei Liu;Yijun Shi
This work demonstrates the failure mechanism of the cathode-short MOS controlled thyristor (CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn-out point localized at the boundary between the active area and terminal region. This is due to the premature triggering of the edge cells compared to the inner cells, which results in the non-uniform distribution of pulse current, consequently destroying the device. Furthermore, it is testified that this failure mode of non-simultaneous triggering will be more severe for the device with large gate parasitic resistance. The mixed-mode 3D TCAD simulations with electro-thermal model were carried out to give an insight of this failure mechanism. The simulation and analysis results were confirmed by experiment results, such as infrared thermography, EMMI, and SEM. Next, an effective approach was proposed to avoid this failure. Finally, the device achieves over 3000 pulses at current more than 5200A without any degradation detected.
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DOI：
10.1109/ispsd.2016.7520840
发表时间：
2016-06
期刊：
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
影响因子：
--
作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
通讯作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
DOI：
10.1109/ispsd.2016.7520854
发表时间：
2016-06
期刊：
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
影响因子：
--
作者：
K. Endo;S. Nagamine;W. Saito;T. Matsudai;T. Ogura;T. Setoya;K. Nakamae
通讯作者：
K. Endo;S. Nagamine;W. Saito;T. Matsudai;T. Ogura;T. Setoya;K. Nakamae
DOI：
10.23919/ispsd.2017.7988930
发表时间：
2017-05
期刊：
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
影响因子：
--
作者：
Chao Liu;Wanjun Chen;H. Tao;Yijun Shi;Xuefeng Tang;Wuhao Gao;Qi Zhou;Zhaoji Li;Bo Zhang
通讯作者：
Chao Liu;Wanjun Chen;H. Tao;Yijun Shi;Xuefeng Tang;Wuhao Gao;Qi Zhou;Zhaoji Li;Bo Zhang
DOI：
--
发表时间：
2015-03
期刊：
--
影响因子：
--
作者：
Jayant Baliga
通讯作者：
Jayant Baliga
影响因子：
2.1
作者：
T. Podlesak;F. Simon;S. Schneider
通讯作者：
T. Podlesak;F. Simon;S. Schneider