Study of surface properties of ATLAS12 strip sensors and their radiation resistance-猫眼课题宝

ATLAS12条形传感器表面特性及其抗辐射性能研究

DOI：

10.1016/j.nima.2016.03.056

发表时间：

2016

期刊：

Accelerators, Spectrometers, Detectors and Associated Equipment

影响因子：

通讯作者：

中科院分区：

文献类型：

作者：

Mikestikova M

由“ATLAS ITk Strip Sensor collaboration”和Hamamatsu Photonics公司研制的用于HL-LHC上ATLAS实验的带式跟踪器升级的辐射硬度传感器，研究了最新传感器设计ATLAS 12的不同类型端盖和桶形微型传感器在辐照前后的表面特性。测试的枪管传感器在“穿通保护”（PTP）结构和端盖传感器方面各不相同，端盖传感器的立体条带在扇形几何形状、条带间距和边缘条带成组选项方面各不相同。传感器的质子注量可达1× 10 ~（16）neq/cm ~ 2，反应堆中子注量可达1× 10 ~（15）neq/cm ~ 2，γ射线剂量可达1 MGy。本研究的主要目标是表征微放电击穿电压估计的漏电流，带间电阻和电容，偏置电阻和PTP结构的有效性作为偏置电压和注量的函数。经验证，ATLAS 12传感器具有远高于工作电压的高击穿电压，这意味着传感器的不同几何形状不会影响其稳定性。条间隔离度是辐照注量的强函数，然而传感器性能在HL-LHC的预期范围内是可接受的。新的门控PTP结构具有低的PTP起始电压和急剧截止的有效电阻，即使在最高的测试辐射注量。条间电容符合辐照前要求的技术质量标准，未观察到辐射诱导的降解。ATLAS 12传感器测试总结，包括不同辐照部位的结果比较。所测得的特性与以前的原型的传感器设计，ATLAS 07。

A radiation hardn+-in-pmicro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics.Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016neq/cm2, by reactor neutron fluence of 1×1015neq/cm2and by gamma rays from60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.