Pulse Compression Characteristics of an Opposed-Electrode Nonlinear GaAs Photoconductive Semiconductor Switch at 2 μJ Excitation

Pulse Compression Characteristics of an Opposed-Electrode Nonlinear GaAs Photoconductive Semiconductor Switch at 2 μJ Excitation
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对置电极非线性 GaAs 光电导半导体开关在 2 μJ 激励下的脉冲压缩特性

DOI:
10.1109/led.2022.3158552
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发表时间:
2022-05
影响因子:
4.9
通讯作者:
Guanghui Qu
Guanghui Qu
中科院分区:
工程技术2区
文献类型:
--
作者:
Ming Xu;Chun Liu;Wei Luo;Chengjie Wang;Jiahao Chang;Rujun Liu;Qian Liu;Wanli Jia;Guanghui Qu

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砷化镓光电导开关的非线性瞬态特性研究对于其在脉冲功率技术中的应用具有重要意义。在这封信中,采用2 ~\mu \text{J}$的激光二极管(LD)能量来触发对电极GaAs PCSS。当偏置电场从6 kV/cm增加到34 kV/cm时,脉冲宽度被压缩,幅度增加。数值模拟了瞬态电场沿着光生载流子输运的分布。结果表明,脉冲压缩效应(PCE)可以归因于负微分迁移率(NDM)和电场屏蔽(EFS)效应。脉冲宽度在时间尺度上的压缩提供了一种可能性,以减轻在时间尺度上的热积累,并进一步抑制潜在的高重复率应用的设备故障。
The investigation of nonlinear transient characteristics of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) is of great significance for its applications in pulsed power technology. In this letter, the laser diode (LD) energy of $2~\mu \text{J}$ is employed to trigger the opposed-electrode GaAs PCSS. The compressed pulse width and increased amplitude are obtained as the bias electric field increases from 6kV/cm to 34kV/cm. It is numerically modeled the transient electric field distribution along the photogenerated carriers’ transport. Results reveal that pulse compression effect (PCE) can be attributed to the negative differential mobility (NDM) and electric-field screening (EFS) effect. The compression of pulse width on time scale provides a possibility to relieve the heat accumulation on time scale, and further to suppress the device failure for the potential high-repetition-rate applications.
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