Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
复制标题
基于二项式分布对弱光下 CMOS 图像传感器中的随机电报信号噪声进行建模
DOI：
10.1088/1674-1056/25/7/070503
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发表时间：
2016-05
影响因子：
1.7
通讯作者：
Xu Jiangtao
中科院分区：
文献类型：
--
作者：
Zhang Yu;Lu Xinmiao;Wang Guangyi;Hu Yongcai;Xu Jiangtao
像素源极跟随器MOSFET中的随机电报信号噪声是CMOS图像传感器在弱光下噪声的主要成分。本文建立了基于二项分布的像素源极跟随器中随机电报信号噪声的物理和统计模型。单位时间内被氧化物陷阱俘获或释放的电子数被描述为服从二项分布的随机变量。结果，获得了相关双采样电路的第一和第二样本的输出状态和对应的概率。由此可以得到经过相关双采样电路后输出状态的标准偏差。在仿真部分，对10万个源极跟随器MOSFET样品进行了仿真，仿真结果表明，在沟道长度和氧化层陷阱密度的影响下，该模型具有与现有模型相似的统计特性。此外，所提出的模型的噪声直方图已在不同的环境温度下进行了评估。
The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result, the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated, and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.
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影响因子：
3.1
作者：
Bong Chan Kim;J. Jeon;Hyungcheol Shin
通讯作者：
Bong Chan Kim;J. Jeon;Hyungcheol Shin
影响因子：
4.3
作者：
J. Tan;B. Buttgen;Cynthia Yin
通讯作者：
J. Tan;B. Buttgen;Cynthia Yin
影响因子：
3.1
作者：
Martin-Gonthier, Philippe;Goiffon, Vincent;Magnan, Pierre
通讯作者：
Magnan, Pierre
影响因子：
4.9
作者：
W. Feng;Chun Meng Dou;M. Niwa;K. Yamada;K. Ohmori
通讯作者：
W. Feng;Chun Meng Dou;M. Niwa;K. Yamada;K. Ohmori
DOI：
10.1109/iedm.2006.346973
发表时间：
2006-12
期刊：
2006 International Electron Devices Meeting
影响因子：
--
作者：
Xinyang Wang;P. R. Rao;A. Mierop;Cynthia Yin
通讯作者：
Xinyang Wang;P. R. Rao;A. Mierop;Cynthia Yin