Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor
Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor
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H 型传感器对单个单晶 CdS 纳米线热电性能的基准表征
DOI：
10.1039/c7ra02734f
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发表时间：
2017-05
期刊：
影响因子：
3.9
通讯作者：
Hu Weida
中科院分区：
文献类型：
--
作者：
Wang Haidong;Zheng Dingshan;Zhang Xing;Takamatsu Hiroshi;Hu Weida
首次提出了一种精确测量单晶CdS纳米线热电性能的H型传感器方法。使用纳米操纵探针从阵列中直接拾取单个纳米线并将其放置在传感器上。我们的方法一般适用于任何纳米线合成的阵列或粉末形式。通过简单地改变外部电路，在同一纳米线样品上测量了塞贝克系数、热导率和电导率，以确保高精度和可靠性。CdS纳米线由于其宽带隙而具有超过300 μV K−1的大塞贝克系数，而由于显著的声子表面散射，其热导率仅为体材料的十分之一。CdS纳米线的优值ZT在320 K时为0.01，比Bi2S3纳米线的优值大两个数量级，在300 K以上呈现快速增加的趋势。
A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time. A nanomanipulation probe was used to directly pick up an individual nanowire from the array and place it on the sensor. Our method is generally applicable to any nanowire synthesized in either array or powder form. By simply changing the external electrical circuits, the Seebeck coefficient, thermal conductivity, and electrical conductivity have been measured on the same nanowire sample to ensure high accuracy and reliability. CdS nanowires have a large Seebeck coefficient over 300 μV K−1 due to their wide band gap, while their thermal conductivity is only one-tenth of that of the bulk material owing to the significant phonon-surface scattering. The figure of merit, ZT, of the CdS nanowire is 0.01 at 320 K, which is larger by two orders of magnitude than the value for a Bi2S3 nanowire, showing a trend of rapid increase above 300 K.
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