Recent advances in nanowires-based field-effect transistors for biological sensor applications.
Recent advances in nanowires-based field-effect transistors for biological sensor applications.
复制标题
DOI：
10.1016/j.bios.2017.09.024
复制
发表时间：
2018-02-15
影响因子：
12.6
通讯作者：
Hahn YB
中科院分区：
文献类型：
--
作者：
Ahmad R;Mahmoudi T;Ahn MS;Hahn YB
基于纳米线（NW）的场效应晶体管（FET）已经吸引了相当大的兴趣来开发使用不同材料（即半导体、聚合物等）的NW的创新生物传感器。基于NW的FET提供了优于其他基于体或非NW纳米材料的FET的显著优点。一维纳米线作为场效应晶体管生物传感器的基础材料，具有优异的表面积体积比，更适合于传感应用。在过去的十年中，基于FET的生物传感器由于其高度的特异性、灵敏度和高选择性而被巧妙地设计和使用。此外，它们具有重量轻、批量生产成本低、尺寸小以及与用于大规模电路的商业平面工艺兼容的优点。在这方面，我们总结了不同的生物分子检测，即葡萄糖，胆固醇，尿酸，尿素，激素，蛋白质，核苷酸，生物标志物等的比较传感性能，目前的挑战，以及未来的发展前景的NWs为基础的FET生物传感器的最新进展进行了详细讨论。本文综述了近几年来纳米线基场效应晶体管在生物传感器领域的研究进展。讨论了基于纳米线的场效应晶体管对各种重要生物分子的传感应用。最后指出了纳米线场效应晶体管目前面临的挑战和发展前景。
Nanowires (NWs)-based field-effect transistors (FETs) have attracted considerable interest to develop innovative biosensors using NWs of different materials (i.e. semiconductors, polymers, etc.). NWs-based FETs provide significant advantages over the other bulk or non-NWs nanomaterials-based FETs. As the building blocks for FET-based biosensors, one-dimensional NWs offer excellent surface-to-volume ratio and are more suitable and sensitive for sensing applications. During the past decade, FET-based biosensors are smartly designed and used due to their great specificity, sensitivity, and high selectivity. Additionally, they have the advantage of low weight, low cost of mass production, small size and compatible with commercial planar processes for large-scale circuitry. In this respect, we summarize the recent advances of NWs-based FET biosensors for different biomolecule detection i.e. glucose, cholesterol, uric acid, urea, hormone, proteins, nucleotide, biomarkers, etc. A comparative sensing performance, present challenges, and future prospects of NWs-based FET biosensors are discussed in detail. This review paper summarizes the recent advances of NWs-based FETs for biological sensors. The sensing applications of NWs-based FETs for various important biomolecules are discussed. The present challenges and further prospects of NWs-based FETs are also highlighted.
登录
查看更多内容
影响因子：
5.4
作者：
Ahmad, Rafiq;Ahn, Min-Sang;Hahn, Yoon-Bong
通讯作者：
Hahn, Yoon-Bong
影响因子：
15
作者：
Cella LN;Chen W;Myung NV;Mulchandani A
通讯作者：
Mulchandani A
影响因子：
12.6
作者：
Balasubramanian, Kannan
通讯作者：
Balasubramanian, Kannan
影响因子：
17.1
作者：
Chang, Hsiao-Kang;Ishikawa, Fumiaki N.;Zhou, Chongwu
通讯作者：
Zhou, Chongwu
影响因子：
7.4
作者：
Chen, Chin-Pei;Ganguly, Abhijit;Chen, Li-Chyong
通讯作者：
Chen, Li-Chyong