Experimental verification of deposition rate increase, with maintained high ionized flux fraction, by shortening the HiPIMS pulse
Experimental verification of deposition rate increase, with maintained high ionized flux fraction, by shortening the HiPIMS pulse
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通过缩短 HiPIMS 脉冲，在保持高电离通量分数的情况下，沉积速率增加的实验验证
DOI：
10.1088/1361-6595/abec27
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发表时间：
2021
影响因子：
3.8
通讯作者：
Lundin Daniel
中科院分区：
文献类型：
--
作者：
Shimizu T;Zanska M;Villoan R P;Brenning N;Helmersson U;Lundin Daniel
大功率脉冲磁控溅射（HiPIMS）是一种电离物理气相沉积技术，提供高通量的金属离子到衬底。然而，该技术在工业应用中的一个缺点是，与等平均功率的直流磁控溅射（dcMS）相比，沉积速率降低。这主要是由于在脉冲期间金属离子的典型值在70%-90%范围内的高目标反吸引概率。为了减少这种影响，我们重点研究了每次HiPIMS脉冲后立即可用的离子通量的贡献；这个时间也被称为余辉。在HiPIMS过程的这个阶段，如果目标上没有负电位，反向吸引的电场就会消失，从而使剩余的离子逃离磁阱并向衬底移动。为了量化所提出的机制，我们研究了HiPIMS脉冲持续时间对钛放电中成膜物质向外通量的影响，已知与dcMS相比，其沉积速率降低了50%以上。通过缩短HiPIMS脉冲长度，发现余辉对成膜物质向外通量的贡献显著增加。例如，在峰值电流密度约为1.10 a cm−2的恒定条件下，HiPIMS放电的脉冲时间从200 μs缩短到50 μs，沉积速率提高了45%。使用无网格石英晶体微平衡离子计测量的电离通量分数表明，可以在不影响电离通量分数的情况下实现沉积速率的增加，而电离通量分数大致保持不变。实现HiPIMS放电优化的关键在于保持较高的峰值放电电流和较短的脉冲长度，以确保溅射物质的充分电离。
High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition technique, providing a high flux of metal ions to the substrate. However, one of the disadvantages for industrial use of this technique is a reduced deposition rate compared to direct current magnetron sputtering (dcMS) at equal average power. This is mainly due to a high target back-attraction probability of the metal ions with typical values in the range 70%–90% during the pulse. In order to reduce this effect, we focused on the contribution of ion fluxes available immediately after each HiPIMS pulse; a time also known as afterglow. Without a negative potential on the target at this stage of the HiPIMS process, the back-attracting electric field disappears allowing remaining ions to escape the magnetic trap and travel toward the substrate. To quantify the proposed mechanism, we studied the effect of HiPIMS pulse duration on the outward flux of film-forming species in titanium discharges, which are known to exhibit more than 50% reduction in deposition rate compared to dcMS. By shortening the HiPIMS pulse length, it was found that the contribution to the outward flux of film-forming species from the afterglow increases significantly. For example, HiPIMS discharges at a constant peak current density of about 1.10 A cm− 2 showed a 45% increase of the deposition rate, by shortening the pulse duration from 200 to 50 μs. Ionized flux fraction measurements, using a gridless quartz crystal micro-balance-based ion meter, showed that this increase of the deposition rate could be achieved without compromising the ionized flux fraction, which remained approximately constant. The key to the achieved optimization of HiPIMS discharges lies in maintaining a high peak discharge current also for short pulse lengths to ensure sufficient ionization of the sputtered species.
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影响因子：
3.8
作者：
P. Poolcharuansin;J. Bradley
通讯作者：
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影响因子：
1.4
作者：
P. Zalm
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影响因子：
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作者：
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影响因子：
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DOI：
10.1063/1.3504371
发表时间：
2010
期刊：
The Review of scientific instruments
影响因子：
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作者：
L. Wu;E. Ko;A. Dulkin;K. J. Park;S. Fields;K. Leeser;L. Meng;D. Ruzic
通讯作者：
D. Ruzic