Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition
Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition
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脉冲激光沉积 SrBi2TaNbO9 铁电薄膜的生长和性能
DOI：
10.1016/j.mseb.2006.10.017
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发表时间：
2007-02
期刊：
影响因子：
--
通讯作者：
Tong, Ziyang
中科院分区：
文献类型：
--
作者：
Yang, Pingxiong;Shi, Meirong;Deng, Hongmei;Qin, Sumei;Tong, Ziyang
采用脉冲激光沉积法制备了高质量的SrBi{sub 2}TaNbO{sub 9} （SBTN）铁电薄膜。对薄膜的微观结构和铁电性能进行了表征。研究了薄膜的光学疲劳（光/偏置），由于偏置/照明处理，平均剩余极化下降了近55%。利用椭圆偏振光谱（SE）研究了薄膜在紫外至红外波段的光学特性。通过折射率函数确定红外区光学常数n{约}0.16，可见光区光学常数n{约}2.12。带隙能量估计为3.93 eV。
High quality SrBi{sub 2}TaNbO{sub 9} (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n {approx} 0.16 in the infrared region and n {approx} 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.
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