Ion excitation and etching effects on top-surface properties of sp2 nanocrystallited carbon films
Ion excitation and etching effects on top-surface properties of sp2 nanocrystallited carbon films
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离子激发和刻蚀对sp2纳米晶碳膜顶面性能的影响
DOI：
10.1016/j.apsusc.2018.08.148
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发表时间：
2018-12
影响因子：
6.7
通讯作者：
Dongfeng Diao
中科院分区：
文献类型：
--
作者：
Xue Fan;Dongfeng Diao
提出了低能离子辐照（离子激发和离子蚀刻）对电子回旋共振（ECR）等离子溅射系统中sp2纳米晶碳膜的形成和顶表面性能的影响。在这项工作中，测量了薄膜沉积过程中的离子蚀刻速率，发现物理蚀刻的阈值电压约为35 V。在阈值电压下，薄膜的生长是由离子激发效应（离子激发最顶层原子的电子）引起的，导致薄膜中以esp2为主的纳米晶尺寸较大。当离子能量超过阈值电压时，薄膜受离子蚀刻效应（离子破坏共价键）诱导生长，透射电子显微镜（TEM）观察和拉曼分析证实纳米晶体尺寸较小。利用原子力显微镜（AFM）研究了不同离子辐照作用下制备的sp2纳米碳膜的顶表面性能。结果表明，离子蚀刻碳膜的表面粗糙度、划痕深度和附着力均小于离子激发碳膜。这些发现为碳基纳米结构材料的制备和应用提供了新的思路。
We proposed the low energy ion irradiation effects (ion excitation and ion etching) on the formation and the top-surface properties ofsp2nanocrystallited carbon films in electron cyclotron resonance (ECR) plasma sputtering system. In this work, the ion etching rate during film deposition was measured and a threshold voltage for physical etching was found to be about 35 V. Below the threshold voltage, the film growth was induced by ion excitation effect (ion exciting electrons of top-most atoms), as a result, thesp2dominant nanocrystallite size in the films was large. When the ion energy exceeded the threshold voltage, the film growth was induced by ion etching effect (ion breaking covalent bond), and the nanocrystallite size was small confirmed by the transmission electron microscopy (TEM) observation and Raman analysis. Furthermore, the top-surface properties ofsp2nanocrystallite carbon films prepared with different ion irradiation effects were examined by using the atomic force microscopy (AFM). Results showed that the ion etched carbon films had smaller surface roughness, scratch depth and adhesive force compared with the ion excited carbon films. These findings shed light on the fabrication and applications of carbon based nanostructured materials.
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