Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection
Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection
复制标题
用于高速低噪声光电检测的超薄MoSe2纳米片异质结的设计和构建
DOI：
10.1007/s12274-016-1151-5
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发表时间：
2016-06
期刊：
影响因子：
9.9
通讯作者：
Yang Qing
中科院分区：
文献类型：
--
作者：
Geng Xiangshun;Yu Yongqiang;Zhou Xiaoli;Wang Chunde;Xu Kewei;Zhang Yan;Wu Chunyan;Wang Li;Jiang Yang;Yang Qing
二维（2D）过渡金属二硫族化合物光电流转换的进展使超灵敏和广谱光电探测器的实现和应用成为可能。以前设备的需求不断推动复杂的技术实现，导致规模和复杂性的限制。此外，开发大面积、低成本的光电探测器将有利于应用。因此，我们展示了一种基于溶液处理超薄MoSe2纳米片的异质结光电探测器的新设计，以满足其应用需求。该光电探测器对可见光和近红外光具有很高的灵敏度，线性动态范围超过124分贝（dB），探测率为~1.2 × 1012琼斯，零偏置时噪声电流接近0.1 pA·Hz-1/2。值得注意的是，该器件显示出高达30 ns的超高响应速度和超过32 MHz的3 db预测带宽，这远远优于迄今为止报道的大多数二维纳米结构和溶液可处理光电探测器，并与商用硅光电探测器相当。将我们的研究结果与材料制备方法结合起来，再加上本文提出的器件制造方法，可以为低成本、高速光电探测器的大面积集成提供一条途径。
Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible–near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of ~1.2 × 1012 Jones, and noise current approaching 0.1 pA·Hz–1/2 at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors.
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影响因子：
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