Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second
Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second
复制标题
界面态诱导超灵敏紫外光光电探测器，分辨率通量低至每秒 85 个光子
DOI：
10.1007/s12274-014-0587-8
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发表时间：
2015-04
期刊：
影响因子：
9.9
通讯作者：
Yu, Shu-Hong
中科院分区：
文献类型：
--
作者：
Jie, Jian-Sheng;Liu, Jian-Wei;Wang, Li;Yu, Shu-Hong
提出了一种基于p型ZnS纳米晶（NR）/氧化铟锡（ITO）肖特基势垒二极管（SBD）的超灵敏紫外（UV）探测器。该器件表现出伪光伏行为，可以允许SBD在室温下检测入射功率为6 × 10− 17 W（NR上为1085光子/s）的紫外光照射，具有优异的再现性和稳定性。相应的探测率和光电导增益分别为3.1 × 1020 cm·Hz 1/2·W-1和6.6 × 105。结果表明，在p-ZnS NR/ITO界面处存在的陷阱态对该纳米SBD的光灵敏度起着至关重要的作用.根据我们的理论计算，即使是几十个光子量级的超低光子通量也会引起界面电位的显著变化，从而引起大的光电流变化。本研究为今后开发高性能光电子器件提供了新的机遇。
We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10−17W (∼85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 1020cm·Hz1/2·W−1and 6.6 × 105, respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.
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DOI：
10.1049/ep.1970.0039
发表时间：
1970
期刊：
Electronics and Power
影响因子：
--
作者：
G. Pridham
通讯作者：
G. Pridham
影响因子：
29.4
作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
通讯作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
影响因子：
4.9
作者：
Yongqiang Yu;Longhui Zeng;Yang Jiang;J. Jie
通讯作者：
Yongqiang Yu;Longhui Zeng;Yang Jiang;J. Jie
Sn催化合成SnO2纳米线及其光电特性
影响因子：
3.5
作者：
Luo, Lin-bao;Liang, Feng-xia;Jie, Jian-sheng
通讯作者：
Jie, Jian-sheng
影响因子：
2.8
作者：
N. Tuğluoğlu;F. Yakuphanoglu;S. Karadeniz
通讯作者：
N. Tuğluoğlu;F. Yakuphanoglu;S. Karadeniz