Contact CMOS imaging of gaseous oxygen sensor array.
Contact CMOS imaging of gaseous oxygen sensor array.
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DOI：
10.1016/j.snb.2011.04.074
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发表时间：
2011-10-01
影响因子：
8.4
通讯作者：
Bright, Frank V.
中科院分区：
文献类型：
--
作者：
Daivasagaya, Daisy S.;Yao, Lei;Yung, Ka Yi;Hajj-Hassan, Mohamad;Cheung, Maurice C.;Chodavarapu, Vamsy P.;Bright, Frank V.
关键词：
我们描述了一种紧凑的发光气态氧（O2）传感器微系统的基础上直接集成的传感器元件与聚合物光学滤波器和放置在一个低功耗的互补金属氧化物半导体（CMOS）成像集成电路（IC）。该传感器的操作上的激发态发射强度的测量O2敏感的发光分子三（4，7-二苯基-1，10-菲咯啉）钌（II）（[Ru（dpp）3]2+）封装在溶胶-凝胶衍生的干凝胶薄膜。聚合物滤光片由聚二甲基硅氧烷（PDMS）与染料（苏丹-II）混合制成。PDMS膜表面被模制为结合梯形微结构的阵列，其用于将光学传感器信号聚焦到成像器像素上。然后将模制的PDMS膜与PDMS滤色器附接。干凝胶传感器阵列接触印刷在PDMS梯形透镜状微结构的顶部。CMOS成像器使用32 × 32（1024个元件）有源像素传感器阵列，每个像素包括一个高增益光电晶体管，将检测到的光信号转换为电流。相关的双采样电路、像素寻址电路、数字控制电路和信号积分电路也在片上实现。CMOS成像器数据作为串行编码信号读出。CMOS成像器在100 Hz采样频率和1.8 V DC下工作时，静态功耗为320 µ W，平均动态功耗为625 µW。该CMOS传感器系统为小型化光学化学气体传感器的开发提供了一个有用的平台。
We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.
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影响因子：
2.5
作者：
MacCraith, BD;McDonagh, C;Murphy, V
通讯作者：
Murphy, V
影响因子：
7.4
作者：
Demas, JN;DeGraff, BA;Coleman, PB
通讯作者：
Coleman, PB
影响因子：
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作者：
Davenport, M;Titus, AH;Bright, FV
通讯作者：
Bright, FV
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作者：
Patounakis, George;Shepard, Kenneth L.;Levicky, Rastislav
通讯作者：
Levicky, Rastislav
影响因子：
7.4
作者：
Cho, EJ;Tao, ZY;Bright, FV
通讯作者：
Bright, FV