Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms.
Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms.
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DOI:
10.1038/s41598-022-18817-1
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发表时间:
2022-08-31
影响因子:
4.6
通讯作者:
Swillam, Mohamed A.
中科院分区:
文献类型:
--
作者:
Abdelsalam, Mostafa;Swillam, Mohamed A.
Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, we discuss a new structure of nanoprisms that are made of doped silicon that acts as an ultra-broadband absorber in both regions. We also discuss the effect of the doping concentration. Additionally, we study the effect of a pure silicon thin film on top of the prisms. Finally, we’re able to find an optimized structure that can absorb 92.6% of the input power from 1 to m.
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