Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device
Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device
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通过参考器件增强 AlGaN/GaN-HEMT pH 传感器的稳定性和灵敏度
DOI：
10.1109/jsen.2020.3047204
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发表时间：
2021-04
影响因子：
4.3
通讯作者：
Zheng Youdou
中科院分区：
文献类型：
--
作者：
Dong Yan;Wang Rui;Xie Zili;Liu Yanli;Lei Jianming;Guo Hui;Dai Quan;Kim Jeong-Gil;Kang Seung-Hyeon;Won Chul-Ho;Lee Jung-Hee;Chen Dunjun;Zhang Rong;Zheng Youdou
为了提高基于 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的 pH 传感器的稳定性和灵敏度，我们通过集成参考 HEMT 器件提出了一种改进的传感结构。该结构 pH 传感器表现出典型的能斯特行为，灵敏度为 54.38 mV/pH，高于未集成参考 HEMT 器件的基于 AlGaN/GaN HEMT 的传感器得出的 49.43mV/pH 值。此外，与传统传感器相比，新型结构传感器的稳定性提高了约19.2%。利用双电层模型和等效电路模型对改进后的性能进行分析，发现新的传感器结构具有更大的电容器，并表现出更好的整流效果，从而降低了电噪声并增强了测试信号的稳定性。同时，新的传感器结构表现出更小的等效电阻，并导致更大的可用输出电流，从而表现出更高的灵敏度。
To improve the stability and sensitivity of pH sensors based on AlGaN/GaN high electron mobility transistors (HEMTs), we proposed a modified sensing structure by integrating a reference HEMT device. This structural pH sensor exhibits a typical Nernstian behavior with a sensitivity of 54.38 mV/pH, which is higher than the value of 49.43mV/pH derived from the AlGaN/GaN HEMT-based sensor without integrating the reference HEMTs device. Furthermore, the stability of the new structural sensor is enhanced by approximately 19.2% in comparison with that of its traditional counterpart. The improved performances are analyzed using an electrical double-layer model together with an equivalent circuit model, and we find that the new sensor structure has a larger capacitor and exhibits a better rectification effect, hence decreasing the electrical noise and enhancing the stability of the testing signal. Meanwhile, the new sensor structure displays a smaller equivalent resistance and results in a larger available output current, hence exhibiting a higher sensitivity.
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影响因子：
4.6
作者：
Franks, W;Schenker, I;Hierlemann, A
通讯作者：
Hierlemann, A
影响因子：
8.4
作者：
VANHAL, REG;EIJKEL, JCT;BERGVELD, P
通讯作者：
BERGVELD, P
影响因子：
3.1
作者：
D. Godwinraj;H. Pardeshi;Sudhansu Kumar Pati;N. Mohankumar;C. Sarkar
通讯作者：
D. Godwinraj;H. Pardeshi;Sudhansu Kumar Pati;N. Mohankumar;C. Sarkar
DOI：
10.1007/978-3-319-97604-4
发表时间：
2019
期刊：
Springer Proceedings in Physics
影响因子：
--
作者：
Ravi Sharma;D. S. Rawal
通讯作者：
Ravi Sharma;D. S. Rawal
DOI：
10.1039/f19747001807
发表时间：
1974-01-01
期刊：
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I
影响因子：
--
作者：
YATES, DE;LEVINE, S;HEALY, TW
通讯作者：
HEALY, TW