A Block-Level Log-Block Management Scheme for MLC NAND Flash Memory Storage Systems
A Block-Level Log-Block Management Scheme for MLC NAND Flash Memory Storage Systems
复制标题
MLC NAND闪存存储系统的块级日志块管理方案
DOI：
10.1109/tc.2017.2679180
复制
发表时间：
2017-09
影响因子：
3.7
通讯作者：
Shao Zili
中科院分区：
文献类型：
--
作者：
Guan Yong;Wang Guohui;Ma Chenlin;Chen Renhai;Wang Yi;Shao Zili
NAND闪存是移动的存储卡和企业固态硬盘（SSD）的主要存储介质。基于日志块的闪存转换层（FTL）方案已被广泛用于管理工业中的NAND闪存存储系统。在基于日志块的FTL中，一些称为日志块的物理块用于保存来自大量数据块的所有页面更新。日志块中频繁的页面更新会带来很大的开销，日志块成为系统的瓶颈。为了解决这个问题，本文提出了一种用于MLC NAND闪存存储系统的块级日志块管理方案--Bloglog。在Bloglog中，通过块级管理，可以将一个数据块的更新页面收集在一起，并尽可能多地放入同一个日志块中，从而可以有效地减少日志块的关联性，从而减少垃圾收集开销。我们还提出了一种新的部分合并操作策略称为降阶合并，我们可以有效地推迟垃圾收集的日志块，以最大限度地利用有效的页面，减少不必要的擦除操作在日志块。在BLog的基础上，我们设计了一个用于多级单元NAND Flash的FTL，称为BLogFTL。我们在一个真实的硬件平台上进行了一组实验。这两个代表性的FTL计划和拟议的BLogFTL已在硬件评估板上实现。实验结果表明，我们的计划可以有效地减少垃圾收集操作，减少系统响应时间相比，以前的基于日志块的FTL的MLC NAND闪存。
NAND flash memory is the major storage media for both mobile storage cards and enterprise Solid-State Drives (SSDs). Log-block-based Flash Translation Layer (FTL) schemes have been widely used to manage NAND flash memory storage systems in industry. In log-block-based FTLs, a few physical blocks called log blocks are used to hold all page updates from a large amount of data blocks. Frequent page updates in log blocks introduce big overhead so log blocks become the system bottleneck. To address this problem, this paper presents BLog, a block-level log-block management scheme for MLC NAND flash memory storage system. In BLog, with block-level management, the update pages of a data block can be collected together and put into the same log block as much as possible; therefore, we can effectively reduce the associativities of log blocks so as to reduce the garbage collection overhead. We also propose a novel partial merge operation strategy called reduced-order merge by which we can effectively postpone the garbage collection of log blocks so as to maximally utilize valid pages and reduce unnecessary erase operations in log blocks. Based on BLog, we design an FTL called BLogFTL for Multi-Level Cell (MLC) NAND flash. We conduct a set of experiments on a real hardware platform. Both representative FTL schemes and the proposed BLogFTL have been implemented in the hardware evaluation board. The experimental results show that our scheme can effectively reduce the garbage collection operations and reduce the system response time compared to the previous log-block-based FTLs for MLC NAND flash.
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DOI：
10.1145/1450135.1450141
发表时间：
2008-10
期刊：
J. Softw.
影响因子：
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作者：
Siddharth Choudhuri;T. Givargis
通讯作者：
Siddharth Choudhuri;T. Givargis
DOI：
10.1145/1837274.1837495
发表时间：
2010-06
期刊：
Design Automation Conference
影响因子：
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作者：
Dimin Niu;Yiran Chen;Cong Xu;Yuan Xie
通讯作者：
Dimin Niu;Yiran Chen;Cong Xu;Yuan Xie
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DOI：
10.1109/tvlsi.2013.2288687
发表时间：
2014
期刊：
IEEE Transactions on Very Large Scale Integration Systems (TVLSI)
影响因子：
--
作者：
Yi Wang;Zi Li Shao;Henry C. B. Chan;Luis Angel D. Bathen;Nikil D. Dutt
通讯作者：
Nikil D. Dutt
DOI：
10.1145/1555754.1555759
发表时间：
2009-06
期刊：
--
影响因子：
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作者：
Ping Zhou;Bo Zhao;Jun Yang;Youtao Zhang
通讯作者：
Ping Zhou;Bo Zhao;Jun Yang;Youtao Zhang
DOI：
10.1109/tce.2002.1010143
发表时间：
2002-05
期刊：
IEEE Trans. Consumer Electron.
影响因子：
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作者：
Jesung Kim;Jong Min Kim;S. Noh;S. Min;Yookun Cho
通讯作者：
Jesung Kim;Jong Min Kim;S. Noh;S. Min;Yookun Cho