1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells
1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells
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1-MeV电子辐照对InGaAsP/InGaAs双结太阳能电池及其组件子电池的影响
DOI：
10.1007/s11432-017-9248-2
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发表时间：
2017-11
期刊：
影响因子：
--
通讯作者：
M. Tan
中科院分区：
文献类型：
--
作者：
X. F. Zhao;M. Heini;M. Sailai;A. Aierken;Q. Guo;Y. D. Li;S. L. Lu;P. Dai;Y. Y. Wu;M. Tan
太阳能电池（SC）被用作卫星和其他空间任务的主要电源，并在恶劣的辐射环境中运行。各种空间任务对动力的需求不断增加。空间应用对超导体的抗辐射能力和功率质量比提出了更高的要求。在过去的十年中，高效率（30%在AM 0，1太阳），晶格匹配，GaInP/GaAs/Ge三结太阳能电池（3 JSC）被选为航天器和卫星的主要电源。提高GaInP/GaAs/Ge三结太阳电池抗辐射能力的关键是尽可能减少GaAs子电池基区的损伤。本文报道了一种用圆片键合技术制作的四结SC，它具有较高的效率（在AM 1. 5，508个太阳）[1]。四结太阳能电池是未来空间太阳能电池的一个很有前途的候选者，可以满足空间任务中大载荷的要求，但对四结太阳能电池辐射性能的研究仍处于早期阶段。尽管关于多结结构的辐射损伤有大量文献[2，3]，但由于电池配置的极端复杂性，电池退化的分析仍然是一个引起强烈科学兴趣和争论的话题。此外，以往的研究大多集中在单结太阳能电池或多结太阳能电池整体的辐照损伤分析。最近有报道称，晶圆键合四结SC中底部双结子电池（InGaAsP/InGaAs）的退化比顶部双结子电池（GaInP/GaAs）的退化更严重[4]。我们主要研究了InGaAsP单结SC、InGaAs单结SC和InGaAsP/InGaAs双结SC的损伤机制。本工作采用MOCVD技术生长了InGaAsP/InGaAs双结SC及其两个子电池（In-GaAsP单结SC和InGaAs单结SC），并将其集成为四结SC，用1 MeV电子辐照。外量子效率（EQE）、亮IV和暗IV特性
Solar cells (SCs) are used as the primary source of power in satellites and other space missions, and operate in a harsh radiation environment in orbit. The demand for power has been increasing in various space tasks. Space applications require high radiation hardness and power-to-mass ratio for SCs. In the past decade, high efficiency (30% at AM0, 1 sun), lattice-matched, GaInP/GaAs/Ge triple-junction solar cells (3JSC) were chosen for the main power source in spacecrafts and satellites. The key to improving the radiation hardness of the triple-junction GaInP/GaAs/Ge solar cell is reducing the damage of the base-zone of GaAs subcell as much as possible. A four-junction SC fabricated by wafer bonding technique and with a higher efficiency has been reported (46% at AM1. 5, 508 suns)[1]. It is a promising candidate for future space solar cells which can meet the requirements of heavy payloads in space missions, however, research on radiation performance of fourjunction SCs is still in its early stage. Although extensive literature is available on radiation damage of multi-junction structures [2, 3], the analysis of cell degradation remains a topic of keen scientific interest and debate due to the extreme complexity of cell configuration. Besides, most of the previous studies focused on the analysis of irradiation damage either in single-junction solar cells or in multi-junction solar cells as a whole. It has been recently reported that the degradation of the bottom dual-junction subcell (InGaAsP/InGaAs) within a wafer-bonded four-junction SC is more serious than that of the top dual-junction subcell (GaInP/GaAs)[4]. Our study focused on the damage mechanism mainly in the InGaAsP singlejunction SC, InGaAs single-junction SC and in the InGaAsP/InGaAs double-junction SC.In the present work, InGaAsP/InGaAs doublejunction SC and its two component subcells (In-GaAsP single-junction SC and InGaAs singlejunction SC) were grown by MOCVD technique and integrated into four-junction SC, and were irradiated by 1-MeV electrons. External quantum efficiency (EQE), light IV and dark IV charac-
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DOI：
10.1109/pvsc.2013.6745053
发表时间：
2013-06
期刊：
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
影响因子：
--
作者：
S. Maximenko;S. Messenger;R. Hoheisel;D. Scheiman;M. González;J. Lorentzen;P. Jenkins;R. Walters
通讯作者：
S. Maximenko;S. Messenger;R. Hoheisel;D. Scheiman;M. González;J. Lorentzen;P. Jenkins;R. Walters
DOI：
--
发表时间：
2003-05
期刊：
3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of
影响因子：
--
作者：
M. Stan;D. Aiken;P. Sharps;J. Hills;B. Clevenger;N. Fatemi
通讯作者：
M. Stan;D. Aiken;P. Sharps;J. Hills;B. Clevenger;N. Fatemi
DOI：
10.1007/978-3-319-97604-4
发表时间：
2019
期刊：
Springer Proceedings in Physics
影响因子：
--
作者：
Ravi Sharma;D. S. Rawal
通讯作者：
Ravi Sharma;D. S. Rawal
DOI：
10.1109/pvsc.2010.5614498
发表时间：
2010-06
期刊：
2010 35th IEEE Photovoltaic Specialists Conference
影响因子：
--
作者：
A. Cornfeld;D. Aiken;B. Cho;A. Vance Ley;P. Sharps;M. Stan;T. Varghese
通讯作者：
A. Cornfeld;D. Aiken;B. Cho;A. Vance Ley;P. Sharps;M. Stan;T. Varghese
MBE 生长的室温晶圆键合四结太阳能电池的电子辐照研究
影响因子：
6.9
作者：
Dai, Pan;Ji, Lian;Yang, Hui
通讯作者：
Yang, Hui